Epistar Corporation

Industrial Technology Research Institute

Playnitride Inc.

Chih-Chiang Lu

Min-Hsun Hsieh

Chien-Fu Huang

Chia-Liang Hsu

Tzu-Chieh Hsu

Chun-Yu Lin

Yi-Ming Chen

Hsin-Chih Chiu

Chien-Yuan Wang

Yi-Chieh Lin

Wei-Chih Peng

Ching-Pei Lin

Shih-I Chen

Wen-Luh Liao

Yao-Ning Chan

Yen-Wen Chen

Ching-Huai Ni

Shih-Chang Lee

Chun-Yi Wu

Hao-Min Ku

Yi-Wen Huang

Ming-Jiunn Jou

Chia-Cheng Liu

Chao-Nien Huang

Shu-Wen Sung

Shane-Shyan Wey

Shiau-Huei San

Yi-Hung Lin

Ta-Cheng Hsu

Hsin-Chan Chung

Hung-Ta Cheng

Tzu Chieh Hsu

Ching-Pu Tai

Chiu-Lin Yao

Tzer-Perng Chen

Chi-Chang Liao

Shou-Lung Chen

Rong-Ren Lee

Jin-Ywan Lin

Yu-Ren Peng

Yi-Ching Lee

Shiuan-Leh Lin

Jau-Min Ding

Shu-Ting Hsu

Ming-Ta Chin

Ming-Siang Huang

Chun-Hsien Chang

Kuen-Ru Chuang

Ru-Shi Liu

Hsin-Mao Liu

Jen-Chau Wu

Tsung-Xian Lee

Yan-Rung Lin

Jui-Hung Yeh

Tsung-Hsien Yang

Ya-Ju Lee

Fu-Chun Tsai

Bao-Shun Yau

Kun-De Lin

Cheng Nan Han

Chung-Yi Chang

Meng-Yuan Hong

Yi Ming Chen

Shih-Chin Hung

Yu-Wei Tu

Keun-Ru Chuang

Chung-Hsun Chien

Chao-Hsing Chen

Yi-Cheng Chen

Wen-Huang Liu

Jia-Kuen Wang

Yi-Ching Chen

Yu-Chu Li

Wen-Hung Chuang

Tzu-Yao Tseng

Po-Jen Su

Bo-Jiun Hu

Tsung-Hsun Chiang

Pei-Hsin Chen

Yung-Fu Chang

Gwo-Jiun Sheu

Yi-Chun Shih

Wu-Tsung Lo

Min-Yen Tsai

Ying-Tsang Liu

Shie-Chang Jeng

Yi-An Sha

Hui-Fang Kao

Wei-Yo Chen

Pai-Hsiang Wang

Kuan-Yi Lee

Chih-Jen Chen

Alexander Chan Wang

Pei-Hsiang Tseng

Tai-Ann Chen

Meng-Lun Tsai

Chun-Fu Tsai

Chung-Huang Huang

Ta-Chuan Kuo

Chin-Lin Yao

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Semiconductor light emitting device and method of fabricating the same

The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

Method of manufacturing a light-emitting device

This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

Light-emitting device

A display panel includes a first substrate, a plurality of first color micro light emitting diodes (LEDs), a plurality of second color LEDs and a shading layer. The first substrate has a plurality of pixel zones arranged in an array form. Each of the first color LEDs has a first light emitting surface facing to a display direction. Each of the second color LEDs has a second light emitting surface facing to the display direction. Each of the pixel zones is provided with one of the first color micro LEDs and one of the second color LEDs. The shading layer is disposed in the pixel zones. The shading layer overlaps part of the first light emitting surface and part of the second light emitting surface in the display direction.

Display panel

A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.

Optoelectronic semiconductor device

The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

Light-emitting device and manufacturing method thereof

A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

Light-emitting device with tunnel junction

A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Method of selectively transferring semiconductor device

Growing community of inventors

Hsinchu, Taiwan

Chih-Chiang Lu