Industrial Technology Research Institute

Au Optronics Corporation

Auo Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Chih-Chiang Chen

Ming-Jui Wang

Chia-Hsin Chung

Sheng-Ming Huang

Cheng-Chan Wang

Jen-Kuei Lu

Hui-Ku Chang

Sheng-Kai Lin

Tsai-Sheng Lo

Jiun-Jye Chang

Ching-Sang Chuang

Wei-Syun Wang

Yu-Cheng Shih

Hsin-Hung Li

Jing-Pin Pan

Han-Sheng Nian

Wei-Chi Wang

Kun-Chih Lin

Chia-Po Lin

Huang-Kai Shen

Seok-Lyul Lee

Pei-Haw Tsao

Shur-Fen Liu

Yuan-Tung Dai

Ming-Jer Chiu

Lee-Ching Kuo

Charng-Shing Lu

Chung-Yu Wang

Yih-Song Jan

Wen-Tsai Su

Pi-Fu Chen

Rong-Jer Lee

Ting-Hui Huang

Shu-Chu Shih

Jong-Min Liu

Tsung-Neng Liao

Chih-Hong Chen

Feng-Lung Chang

Chung-Shu Chang

Chin-Chi Shen

Kuo-Kuei Lee

Wen-Yu Huang

Jui-Pin Shih

Yi-Ming Lin

A near-eye display device, including a substrate, a light-emitting element, an active element, an optical layer, and a light guide structure, is provided. The light-emitting element is located on the substrate and includes a first type semiconductor pattern. The active element is located adjacent to the light-emitting element. A channel layer of the active element and the first type semiconductor pattern of the light-emitting element belong to the same layer. The optical layer covers the light-emitting element and the active element. The light guide structure is located on the optical layer and includes an in-coupling portion and an out-coupling portion, wherein an orthogonal projection of the in-coupling portion on the substrate is overlapped with an orthogonal projection of the light-emitting element on the substrate. A manufacturing method of the near-eye display device is also provided.

Near-eye display device and manufacturing method of the same

A display device includes a first image generating unit and a first waveguide glass. The first image generating unit is configured to emit first light. The first waveguide glass faces toward the first image generating unit. The first waveguide glass includes a first microstructure, two second microstructures and a third microstructure. The first microstructure is located between two ends at the same side of the two second microstructures. The third microstructure is located between the two second microstructures. The third microstructure has a first grating and a second grating. An extending direction of the first grating is different from an extending direction of the second grating. The second microstructure is configured to receive the first light of the first image generating unit transmitted through the first microstructure and transmit the first light to the third microstructure.

Display device and operating method thereof

A head-up display includes an image generating unit and a waveguide glass. The waveguide glass faces toward the image generating unit. The waveguide glass includes a first microstructure, a second microstructure and a third microstructure. The first microstructure has a first width. The second microstructure is adjacent to the first microstructure. The third microstructure is adjacent to the second microstructure. The third microstructure has tiling areas adjacent to each other. A gap between the two adjacent tiling areas is less than half of the first width.

Head-up display and operating method thereof

A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Light-emitting device and manufacturing method thereof and manufacturing method of light-emitting apparatus

A polarizer substrate includes a substrate, a reflective layer, and a metal pattern layer. The reflective layer is located on the substrate and has a transmission area and a reflective area. The metal pattern layer is located on the reflective layer and the substrate. The metal pattern layer includes a polarizer structure and a microstructure. The polarizer structure includes a plurality of grid lines overlapping the transmission area. A thickness of each of the grid lines is 200 nm to 500 nm, a width of each of the grid lines is 30 nm to 70 nm, and a distance between each adjacent two of the grid lines is 30 nm to 70 nm. The microstructure overlaps the reflective area, and a thickness of the microstructure is 20 nm to 500 nm.

Polarizer substrate and manufacturing method thereof

An active device substrate including a substrate, first metal grid wires, a first transparent conductive layer, a gate insulating layer, a semiconductor layer, a source, and a drain is provided. The first metal grid wires are located on the substrate. The first transparent conductive layer includes a scan line and a gate connected to the scan line. The scan line and/or the gate is directly connected to at least a part of the first metal grid wires. The gate insulating layer is located on the first transparent conductive layer. The semiconductor layer is located on the gate insulating layer and overlapped with the gate. The source and the drain are electrically connected to the semiconductor layer.

Active device substrate and method for manufacturing the same

A polarizer substrate includes a substrate, an organic planarization layer, an inorganic buffer layer, and a plurality of strip-shaped polarizer structures. The organic planarization layer is located on the substrate. The inorganic buffer layer is located on the organic planarization layer. The inorganic buffer layer has a plurality of trenches located on a first surface. The trenches do not penetrate through the inorganic buffer layer. The strip-shaped polarizer structures are located on the first surface of the inorganic buffer layer. Each of the trenches is located between two adjacent polarizer structures. A display panel is also provided.

Polarizer substrate and display panel

An imprint mold and a method for manufacturing the same are provided. The imprint mold includes a plurality of substantially identical or different mold patterns, wherein there isn't any height difference between the mold patterns. The imprint mold manufacturing method includes: disposing a first layer on a substrate; disposing a first hard mask layer on the first layer, wherein the first hard mask layer includes one or more first hollow area; forming a first mold pattern on the first layer by imprinting, wherein the region of the first mold pattern completely overlaps the region of the vertical projection of the first hollow area on the first layer; removing the first hard mask layer; disposing a second hard mask layer on the first layer, wherein the second hard mask layer includes one or more second hollow area, wherein the region of the vertical projection of the second hollow area on the first layer is adjacent to the first mold pattern; forming a second mold pattern on the first layer by imprinting, wherein the region of the second mold pattern completely overlaps the region of the vertical projection of the second hollow area on the first layer; and removing the second hard mask layer.

Imprint mold and method for manufacturing the same

A wire grid polarizer and a display panel using the same are provided. The wire grid polarizer includes a substrate, a plurality of wire grids, a plurality of patterned light absorbing layers, and a surface covering layer. The plurality of wire grids are disposed on the substrate, wherein there are a plurality of gaps between every two wire grids. The plurality of patterned light absorbing layers are disposed corresponding to and overlapping the wire grids respectively, wherein every two of the patterned light absorbing layers have one of the gaps. The surface covering layer is disposed on the patterned light absorbing layers and directly contacts the patterned light absorbing layers.

Wire grid polarizer and display panel using the same

A cleaning apparatus comprises a housing, a driving mechanism and a plurality of cleaning elements. The driving mechanism is disposed in the housing. The cleaning elements are connected to the driving mechanism. The driving mechanism rotates the cleaning elements to clean the emitters.

Cleaning apparatus

Bond pad structures are presented. Some embodiments of the structure include a conductive conductor-insulator layer overlying a substrate. The conductive conductor-insulator layer includes a composite region having a conductor sub-region and insulator sub-region, which neighbor each other, and a single material region. The insulator is harder than the conductor.

Bond pad structure

A detection apparatus for detecting a defect in an array of a liquid crystal display, comprises a main chamber, a stage, a detection device and a main heater. The stage is disposed in the main chamber, and the array is placed on stage. The detection device is disposed in the main chamber and detects an electrical characteristic of the array. The main heater heats the array to a first temperature to reveal the defect of the array.

Method of detecting array of liquid crystal display and apparatus thereof

A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.

Method of forming a top gate thin film transistor

A transflective LCD device having various cell gaps. The transflective LCD device is characterized by the passivation layer being formed on a lower substrate in a reflective region. A color filter layer is formed above the passivation layer, wherein a first thickness of the color filter layer in the reflective region is smaller than a second thickness of the color filter layer in a transmissive region. A transparent organic element is formed on an inner side of an upper substrate in the reflective region for bridging a gap in a liquid crystal layer between upper and lower substrates, wherein one end of the transparent organic element shores up the lower substrate. Thus, the gap thickness in the reflective region is smaller than that in the transmissive region.

Transflective liquid crystal display device having various cell gaps and method of fabricating the same

A microelectronic assembly, and method of making the same, including a wire stitch bonded on an electroplated gold bump or electroless nickel/gold bump on a bond pad of an integrated circuit chip. The electroplated gold bump or electroless nickel/gold bump provides a relatively flat upper surface which is excellent for making a wire stitch bond thereto. The microelectronic assembly may include a multiple integrated circuit chip stack attached to a substrate such as a ball grid array. The electroplated gold bumps or electroless nickel/gold bumps may be formed on all of the integrated circuit chips and wire stitch bonds formed on the electroplated gold bumps or electroless nickel/gold bumps thereby connecting the integrated circuit chips to each other or to an underlying ball grid array.

Wire stitch bond on an integrated circuit bond pad and method of making the same

Growing community of inventors

Hsinchu, Taiwan

Chih-Chiang Chen