United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Chih-Chi Cheng

Chien-Cheng Tsai

Li-Wei Feng

Shih-Fang Tzou

Chia-Wei Wu

Ger-Pin Lin

Chiu-Hsien Yeh

Hui-Ling Chuang

Wan-Chi Wu

Hung-Jung Yan

A semiconductor device and method of manufacturing the same is provided in the present invention. The method includes the step of forming first mask patterns on a substrate, wherein the first mask patterns extend in a second direction and are spaced apart in a first direction to expose a portion of first insulating layer, removing the exposed first insulating layer to form multiple recesses in the first insulating layer, performing a surface treatment to the recess surface, filling up the recesses with a second insulating layer and exposing a portion of the first insulating layer, removing the exposed first insulating layer to form a mesh-type isolation structure, and forming storage node contact plugs in the openings of mesh-type isolation structure.

Semiconductor device and method of manufacturing the same

A manufacturing method of an epitaxial contact structure in a semiconductor memory device includes the following steps. A recess is formed in a semiconductor substrate by an etching process. An etching defect is formed in the recess by the etching process. An oxidation process is performed after the etching process. An oxide layer is formed in the recess by the oxidation process, and the etching defect is encompassed by the oxide layer. A cleaning process is performed after the oxidation process. The oxide layer and the etching defect encompassed by the oxide layer are removed by the cleaning process. An epitaxial growth process is performed to form an epitaxial contact structure in the recess after the cleaning process.

Manufacturing method of epitaxial contact structure in semiconductor memory device

Growing community of inventors

Tainan, Taiwan

Chih-Chi Cheng