E Ink Holdings Inc.

Industrial Technology Research Institute

Quanta Computer Incorporated

Taiwan Semiconductor Manufacturing Comp. Ltd.

Grand Process Technology Corporation

Grand Plastic Technology Corporation Taiwan

Grand Plastic Technology Corporation

Chih-Cheng Wang

Ming-Sheng Chiang

Hun-Jan Tao

Baw-Ching Perng

Jen-Rong Huang

Chih-Yuan Tseng

Shih-Fang Chen

Pang-Ming Chiang

Hsiao Shih-Yi

Huai-Cheng Lin

Kang Tsung-Kuei

Chien-Han Chen

Hung-Yang Wu

Hsieh Yue Ho

Ted-Hong Shinn

Ming-Huan Tsai

Chi-Ming Wu

Yao-Chou Tsai

Peng-Fu Hsu

Fang-An Shu

Fang-Cheng Chen

Bing-Yue Tsui

Wen-Chung Tang

Muh-Wang Liang

Chen-Chung Du

Lih-Hsiung Chan

Shu-Ping Yan

Ta-Nien Luan

Chia-Ming Chen

Sheng-Lang Lee

Chih-Feng Huang

Yi-Chao Weng

Jann-Shyang Liang

Yue-Ho Hsieh

Shih-Yi Hsiao

Weng-Shih Cang

Cheng Chou Shieh

Jenn Chen Tang

Zong-En Wu

Yun-Cheng Chiu

Bwo-Yi Lee

Chin-Hsuan Kuan

Chuan-Hung Chiang

An integrated wafer debonding and cleaning apparatus and a debonding and cleaning method are provided. The integrated wafer debonding and cleaning apparatus includes an input port, a debonding module, a wafer cleaning device, and a transport device. The input port is configured to allow a substrate to be processed to enter the integrated wafer debonding and cleaning apparatus. The substrate to be processed includes a wafer and a carrier which are bonded. The debonding module is configured to debond the substrate to be processed, and to separate the wafer from the carrier. The wafer cleaning apparatus is configured to clean the wafer. The transport device is configured to transfer the substrate to be processed, the wafer, and the carrier. The debonding module and the wafer cleaning module are integrated in one apparatus for continuous processing.

Integrated wafer debonding and cleaning apparatus and debonding and cleaning method

A pixel structure includes a first patterned transparent conductive layer, an active layer, an insulating layer and a second patterned transparent conductive layer. The first patterned transparent conductive layer is disposed on a substrate and includes a source, a drain and a pixel electrode connected to the drain. The active layer connects the source and the drain. The insulating layer covers the source, the drain and the active layer. The second patterned transparent conductive layer is disposed on the insulating layer and includes a gate disposed above the active layer and a common electrode disposed above the pixel electrode. A fabrication method of a pixel structure is also provided.

Pixel structure and fabrication method thereof

A manufacturing method for a display module is provided. The method comprises following steps. A module structure comprising a cover plate, a substrate, and a front plate disposed between the cover plate and the substrate is provided. A space is defined by a lower surface of the cover plate, an upper surface of the substrate, and a side surface of the front plate. A holding structure comprising a holding layer disposed under the module structure is provided. A sealant is filled into the space. Portions of the package layer and the holding structure disposed outside a side surface of the cover plate and a side surface of the substrate are removed.

Manufacturing method for display module

A gas barrier substrate including a flexible base material, at least one first inorganic gas barrier layer and at least one second inorganic gas barrier layer is provided. The flexible base material has an upper surface. The first inorganic gas barrier layer is disposed on the flexible base material and covers the upper surface. The second inorganic gas barrier layer is disposed on the first inorganic gas barrier layer and covers the first inorganic gas barrier layer. A water vapor and oxygen transmission rate of the second inorganic gas barrier layer is lower than that of the first inorganic gas barrier layer.

Gas barrier substrate

A pixel structure and a manufacturing method of the pixel structure are provided. The pixel structure includes a substrate, a transistor, a planarizing layer, a plurality of contact windows, and a pixel electrode layer. The transistor is disposed on the substrate and includes a gate, a source, and a drain. The planarizing layer is disposed on the gate, the source, and a portion of the drain. The contact windows penetrate the planarizing layer and expose another portion of the drain. The pixel electrode layer is disposed on the planarizing layer, on the another portion of the drain, and in the contact windows and is electrically connected to the drain.

Pixel structure and manufacturing method thereof

A pixel structure includes a flexible substrate, an active device, a conductive pattern, a first insulation layer, and a pixel electrode. The active device is disposed on the flexible substrate and includes a gate, a channel, a source, and a drain. The source and the drain are connected to the channel and are separated from each other. The channel and the gate are stacked in a thickness direction. The active device is disposed between the conductive pattern and the flexible substrate. The conductive pattern is electrically connected to the drain of the active device. The first insulation layer covers the conductive pattern and has first contact holes separated from one another, and the first contact holes expose the conductive pattern. The first insulation layer is disposed between the pixel electrode and the conductive pattern. The pixel electrode is electrically connected to the conductive pattern through the first contact holes.

Pixel structure with pixel electrode connected to conductive pattern through plural contact holes

A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.

Manufacturing method for flexible display apparatus

A pixel structure including a flexible substrate, an active device, a pixel electrode, a capacitance electrode, a first insulation layer, a second insulation layer, and a padding layer is provided. The pixel electrode is electrically connected to the active device and has pixel electrode openings. The capacitance electrode is disposed overlapping the pixel electrode and has capacitance electrode openings corresponding to the pixel electrode openings. The first insulation layer is disposed between the pixel electrode and the flexible substrate. The second insulation layer is disposed between the pixel electrode and the capacitance electrode. The active device is disposed between the second insulation layer and the flexible substrate. The padding layer includes padding pillars and a padding pattern covering over the active device. The padding pillars are located in the pixel electrode openings respectively. The pixel electrode partially covers the padding pattern and exposes the padding pillars.

Pixel structure

A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.

Wafer electroplating apparatus

A test system for testing a portable electronic apparatus having a digital image capture module and a test interface is described. The test system has at least a sender, a holder, and a controller. The holder is used to hold the portable electronic apparatus. The controller is used to control the sender to send at least a test slide, according to a predetermined procedure, to a position. When the slide is moved to the position, the controller commands the portable electronic apparatus, via the test interface, to capture the image on the test slide and then performs a test on the image data. The test system uses an automatic control and a shop floor system to achieve an automatic test.

Test system and method for portable electronic apparatus

The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.

Electroplating apparatus with functions of voltage detection and flow rectification

A test system for testing a portable electronic apparatus is described. The test system has at least a display, a platform, and a controller. The controller controls the display to display test images in sequence. The controller commands the portable electronic apparatus, via a test interface, to capture the test images on the display to generate image data. The controller determines whether the image data meet a predetermined test requirement. The test system can further include at least a light source and a reflector. The reflector reflects the light on the display, so that the display reaches a predetermined uniformity of light.

The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact. Another form of the electrode structure of the present invention is making both the positive and negative electrodes on the front side of the LED by etching the p-type semiconductor of the pn junction and forming a strip of negative electrode on the n-type semiconductor, the positive electrode is formed on the p-type semiconductor.

Method for wet etching of high k thin film at low temperature

A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent present at about 0.1 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution; and, at least one halogen containing acid present from about 0.0001 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution.

Wet etchant composition and method for etching HfO2 and ZrO2

The present invention discloses a puddle etching method of thin film. In a spin etching equipment, pre-wet the wafer by D.I. water and etch solution to remove the contamination and the upper layer of the film on the wafer. Then spin slowly (about 0-50 rpm) and inject etching solution to form a puddle of etching solution which will stay on the wafer, the wafer then keep spin slowly (about 0-50 rpm) such that the puddle of etching solution stay on the wafer and etching is going on by puddle etching. After the thin film is etched, the wafer is spin at higher speed, and D.I. water is injected to rinse. Then, IPA is used to remove the D.I. water by Marangoni effect. Finally raise the speed to dry the wafer.

Puddle etching method of thin film by using spin-processor

Growing community of inventors

Hsinchu, Taiwan

Chih-Cheng Wang