Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Chang Huang

Jung-Chih Tsao

Yao-Hsiang Liang

Chi-Ming Lu

Shih-Chieh Chang

Jian-Shin Tsai

Ing-Ju Lee

Ying-Lang Wang

Szu-An Wu

Ching-Yao Sun

Jyun-Ru Wu

Jian-Ming Chen

Ching-Che Huang

Chih-Hui Huang

Ching-Ho Hsu

Yu-Ku Lin

Li-Yen Fang

Han-Chieh Huang

Chi-Cheng Hung

Chih-Chung Chang

Jun-Nan Nian

A method of forming a semiconductor device, comprising: forming a first conductive layer on an active device of a substrate; forming a dielectric layer on the first conductive layer; forming a through hole passing through the dielectric layer to expose a portion of the first conductive layer; conformally depositing a glue layer in the through hole to cover the portion of the first conductive layer comprising: forming a plurality of isolated lattices in an amorphous region at which the isolated lattices are uniformly distributed and extend from a top surface of the glue layer and terminate prior to reach a bottom of the glue layer, wherein the glue layer has a predetermined thickness; depositing a conductive material on the glue layer within the through hole, thereby forming a contact via; and forming a second conductive layer on the contact via over the first conductive layer.

Method for forming titanium nitride barrier with small surface grains in interconnects

Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.

Image sensing device and manufacturing method thereof

A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCN, and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.

Method of forming deep trench isolation in radiation sensing substrate and image sensor device

A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.

Metal shielding layer in backside illumination image sensor chips and methods for forming the same

A method of manufacturing a semiconductor structure includes receiving a substrate including a first side and a second side opposite to the first side; forming a recess extending between the first side and the second side; and disposing a conductive material in the recess to form a conductive via, wherein the conductive via includes an interface, a first portion adjacent to the first side and a second portion adjacent to the second side, the interface is disposed between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.

Method of manufacturing semiconductor structure

A semiconductor device includes a substrate, a dielectric layer disposed on the substrate, and a conductive stack disposed within the dielectric layer. The conductive stack includes at least one first conductive layer, a second conductive layer disposed over the at least one first conductive layer, and a contact structure disposed between the at least one first conductive layer and the second conductive layer. The contact structure includes a contact via electrically connecting the at least one first conductive layer to the second conductive layer, and a glue layer conformal to sidewalls and a bottom surface of the contact via. The glue layer has isolated lattices and an amorphous region at which the isolated lattices are uniformly distributed.

Semiconductor device and method of forming the same

A semiconductor structure includes a substrate including a first side, a second side opposite to the first side, and a device layer over the second side, and a conductive via extending through the substrate, and including a first portion adjacent to the first side and a second portion adjacent to the device layer, wherein the conductive via includes an interface between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.

Semiconductor structure and manufacturing method thereof

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Chiayi, Taiwan

Chih-Chang Huang