Taiwan Semiconductor Manufacturing Comp. Ltd.

Aihol Corporation

Chih-An Lin

Hsiao-Wei Yeh

Ping-Shan Lai

Szu-Yuan Lee

Feng-Cheng Hsu

Chun-Kuang Chen

Chien-Wei Wang

Ching-Yu Chang

Jian-Hong Chen

Disclosed herein is a method of using a hyaluronan conjugate, which includes a hyaluronic acid (HA), a sex hormone, and a linker for coupling one of the disaccharide units of the HA and the sex hormone. The hyaluronan conjugates are used in treating neurodegenerative diseases.

Hyaluronan conjugates and uses thereof

Disclosed herein is a hyaluronan conjugate, which includes a hyaluronic acid (HA), a sex hormone, and a linker for coupling one of the disaccharide units of the HA and the sex hormone. Also disclosed herein are the uses of the hyaluronan conjugate in treating or preventing neurodegenerative diseases.

Disclosed herein is a method for preparing a hyaluronan-drug conjugate. The method uses the ethyl cyano(hydroxyimino)acetate/diisopropylcarbodiimide coupling system in a homogeneous reaction phase, which unexpectedly improves the substitution rate and substitution efficiency of hyaluronan-drug conjugates for various drugs.

Method for improving substitution rate and/or substitution efficiency of hyaluronan-drug conjugates

A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.

Double patterning strategy for contact hole and trench in photolithography

The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

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Chong-He, Taiwan

Chih-An Lin