Epistar Corporation

Lite-on Technology Corporation

Chien-Yuan Wang

Min-Hsun Hsieh

Chih-Chiang Lu

Ru-Shi Liu

Yen-Wen Chen

Hung-Yuan Su

Liang-Sheng Chi

Chiu-Lin Yao

Chih-Ming Wang

Ming-Chi Hsu

Wei-Chih Peng

Wei-Yo Chen

Chia-Liang Hsu

Tzer-Perng Chen

Ta-Cheng Hsu

Tsung-Xian Lee

Chun-Yi Wu

Jin-Ywan Lin

Jui-Hung Yeh

Ya-Ju Lee

Han-Min Wu

Jen-Shui Wang

Chia-Fen Tsai

Chou-Chih Yin

Yi-Shan Lin

Shu-Ting Hsu

Yu-Wei Tu

Shih-Chin Hung

Yu-Sheng Tang

Li-Ming Chang

Yu-Jiun Shen

Wei-Yu Chen

Meng-Lun Tsai

Shiau-Huei San

Shu-Fen Hu

Chia-Cheng Kang

Chen-Lun Hsing Chen

Hsing Chen Chen-Lun

Ml Tsai

Shi-Liang Yeh

This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Light emitting device

The method includes preparing a plurality of light-emitting units, one of the plurality of light-emitting units comprising an electrode, a light-emitting stack, and a protection layer with a first part covering the electrode and a second part which comprises a portion surrounding the electrode and covers the light-emitting stack; removing the portion without removing the first part; forming a wavelength conversion layer on the first part and the light-emitting stack not covered by the second part; and removing the first part to substantially expose the electrode.

Method of making a light emitting device and a light emitting device made thereof

An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

Optoelectronic semiconductor device

This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.

Semiconductor light-emitting device and the manufacturing method thereof

An optoelectronic element comprises a semiconductor stack layer comprising a first surface and a second surface; a first transparent conductive oxide layer formed on the first surface of the semiconductor stack layer, wherein the first transparent conductive oxide layer comprises at least an opening exposing the first surface of the semiconductor stack layer; and a second transparent conductive oxide layer filled into the opening and covering the first transparent conductive oxide layer; wherein the first transparent conductive oxide layer and the second transparent conductive oxide layer are comprised of a material selected from the group consisting of indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), and zinc oxide (ZnO), and the first transparent conductive oxide layer and the second transparent conductive oxide layer have the same constituent material with different refractive indexes.

Optoelectronic device

This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Light-emitting device with narrow dominant wavelength distribution and method of making the same

Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer.

Light-emitting device

A light-spreading device is disclosed, wherein the light-spreading structure is formed with a wing-shaped protrusion part extending in a first direction and protruding in a different, second direction, such that light enters a surface on one side of the light-spreading structure, opposite to a recess located on another side of the light-spreading structure. The light-spreading structure also has an uneven surface associated with at least one of the wing-shaped protrusion part, the light-entering surface, and the recess.

Light-spreading device

A light-emitting apparatus includes a submount, a chip carrier formed on the submount, and a light-emitting chip formed on the chip carrier. The light-emitting apparatus also includes a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

An optoelectronic semiconductor device including: a substrate; a semiconductor system having an active layer formed on the substrate; and an electrode structure formed on the semiconductor system, wherein the electrode structure includes: a first conductivity type bonding pad; a second conductivity type bonding pad; a first conductivity type extension electrode; and a second conductivity type extension electrode, wherein the first conductivity type extension electrode and the second conductivity type extension electrode form a three-dimensional crossover; wherein the first conductivity type extension electrode and the second conductivity type extension electrode are on the opposite sides of the active layer.

Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer.

Light-emitting device and light mixing device

A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

Light-emitting device having a thinned structure and the manufacturing method thereof

A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as 'TCO' hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.

A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure.

Growing community of inventors

Hsinchu, Taiwan

Chien-Yuan Wang