Richtek Technology Corporation

Industrial Technology Research Institute

National Taiwan University

Realtek Semiconductor Inc.

Advanced Semiconductor Engineering, Inc.

Tsinghua University

Yun Yun Ai Baby Camera Co., Ltd.

Cho Pharma Inc.

Other

Himax Technologies, Inc.

Wistron Neweb Corporation

Inventec Appliances Corporation

Inventor Precision Co., Ltd.

Du Pont Wirex Ltd

Chien-Yu Chen

Ting-Wei Liao

Chien-Wei Chiu

Kun-Huang Yu

Ta-Yung Yang

Wu-Te Weng

Horng-Jzer Shih

Tsung-Yi Huang

Chih-Wen Hsiung

Kai-Cheung Juang

Kuo-Chin Chiu

Hao-Wu Lin

Hsin-Yi Lin

Shih-Yun Shen

Chih-Hung Tsai

Kang-Ning Shan

Chih-Hsin Tseng

Yong-Zhong Hu

Chun-Lung Chang

Kuo-Ching Chu

Huan-Yun Wu

Yu-Chiao Wang

Hsueh-Fa Hsu

Por-Sau Lin

Chien-Hui Hsu

Chi-Huey Wong

Tzi-Cker Chiueh

Chung-Yi Wu

Meng-Jen Wang

Nan-Horng Lin

Chung-Wei Lin

Han-Chung Wu

Yuan-Shuo Chang

Lung-Han Peng

Chung-Chih Wu

Shao-Hung Lu

Ho-Hsiu Chou

Chiu-Chen Huang

Li-Wei Chen

Chiou-Shann Fuh

Wei-Kai Lee

Hoang Yan Lin

Tsan-Huang Chen

Chueh-Hao Yu

Ya-Fen Tsai

Chih-Li Chang

Yi-Jiun Chen

Bo-Ting Yeh

Cheng-Kuang Lin

Sung-Li Wang

Hoang-Yan Lin

Chien-Hwa Chiu

Der-Jen Sun

Tzu-Ling Liang

Cheng-Wei Yang

Yue-Hung Tang

Ju-Mei Li

Li Lin

Tse-Wei Chen

Wei-Chun Wang

Chih-Ting Hsu

Chih-Hao Chuang

Meng-Kuei Hsieh

Yu-Chuan Kuo

Chao-Yang Kao

Chen-Yu Yeh

Tzu Ling Liang

Wen-Jin Lee

Lin Yang

A reference voltage generator circuit includes: a first transistor and a second transistor, wherein the first transistor and the second transistor are coupled with each other and are located on a substrate, wherein the first transistor has a first conduction threshold voltage and a first rated voltage, wherein the second transistor has a second conduction threshold voltage and a second rated voltage, wherein the first rated voltage is higher than the second rated voltage; wherein the reference voltage generator circuit is configured to generate a bandgap reference voltage with temperature compensation according to a difference between the first conduction threshold voltage and the second conduction threshold voltage.

Reference voltage generator circuit with reduced manufacturing steps

A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

High voltage device and manufacturing method thereof

The present disclosure relates to a composition for inducing immune response comprising a glycoengineered antibody or antigen-binding fragment thereof that is specific for an antigen portion having a receptor binding domain (RBD) of a surface protein of a virus. The present disclosure also relates to an immune combination and a method for treating an infection by a virus.

Immune composition comprising antigen and glycoengineered antibody thereof

A switching converter circuit for switching one end of an inductor therein between plural voltages according to a pulse width modulation (PWM) signal to convert an input voltage to an output voltage. The switching converter circuit has a driver circuit including a high side driver, a low side driver, a high side sensor circuit, and a low side sensor circuit. The high side sensor circuit is configured to sense a gate-source voltage of a high side metal oxide semiconductor field effect transistor (MOSFET), to generate a low side enable signal for enabling the low side driver to switch a low side MOSFET according to the PWM signal. The low side sensor circuit is configured to sense a gate-source voltage of a low side MOSFET, to generate a high side enable signal for enabling the high side driver to switch a high side MOSFET according to the PWM signal.

Switching converter circuit and driver circuit having adaptive dead time thereof

A power supply is provided. The power supply includes a power supply circuit and a control circuit. The power supply circuit includes a voltage converter and multiple point-of-load circuits. The voltage converter generates a third voltage according to a first voltage. The load point-of-load circuits generate at least one second voltage and at least one state signal according to the third voltage. The at least one second voltage is suitable for supplying power to a load. The control circuit is coupled to the power supply circuit. The control circuit determines whether a single event latch-up occurs in the power supply circuit according to the at least one state signal. When the single event latch-up occurs in the power supply circuit, the control circuit switches off the power supply circuit to stop generating the at least one second voltage and the at least one state signal.

Power supply

A switching converter circuit, which switches one terminal of an inductor to different voltages, includes a high side MOSFET, a low side MOSFET, and a driver circuit which includes a high side driver, a low side driver, and a dead time control circuit. According to an output current, The dead time control circuit adaptively delays a low side driving signal to generate a high side enable signal for enabling the high side driver to generate a high side driving signal according to a pulse width modulation (PWM) signal; and/or adaptively delays the high side driving signal to generate a low side enable signal for enabling the low side driver to generate the low side driving signal according to the PWM signal, so as to adaptively control a dead time in which the high side MOSFET and the low side MOSFET are both not conductive.

A light supply method is provided. The light supply method includes: providing a first driving signal in a first time interval by a driver and providing a first time-varying light by a light source module in response to the first driving signal; providing a second driving signal in a second time interval after the first time interval by the driver and providing a first fixed light by the light source module in response to the second driving signal; and providing a third driving signal by the driver in a third time interval after the second time interval and providing a second time-varying light by the light source module in response to the third driving signal.

Light supply method for sleep aid

A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film. Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

Halide material and optical unit and optoelectronic device having the same

Camera

A visible-light-image physiological monitoring system with thermal detecting assistance is disclosed. The system takes a visible-light image and a thermal image of a body at the same time. A processing unit identifies a body feature of the visible-light image and determines a coordinate of the feature. In a learning mode, an initial temperature of the body feature is determined from the thermal image according to the coordinate of the body feature. After then, a physiological status monitoring mode is executed to monitor the temperature changes of the body feature and output an alarm when the temperature is determined to be abnormal. Therefore, a monitoring accuracy of the visible-light-image physiological monitoring system is increased and avoids transmitting false alarms or no alarms.

Visible-light-image physiological monitoring system with thermal detecting assistance

A switch capable of decreasing parasitic inductance includes: a semiconductor device, a first top metal line, and a second top metal line. The second top metal line electrically connects a power supply input end and a current inflow end of the semiconductor device, wherein a first part of the first top metal line is arranged in parallel and adjacent to a second part of the second top metal line. When the semiconductor device is in an ON operation, an input current outflows from the power supply input end, and is divided into a first current and a second current. When the first current and the second current flow through the first part and the second part respectively, the first current and the second current flow opposite to each other, to reduce an total parasitic inductance of the first top metal line and the second top metal line.

Switch capable of decreasing parasitic inductance

A three-phase expandable AC system based on battery reconfiguration and a control method thereof are provided. The system includes a reconfigurable battery array capable of connecting to a load or being tied to a grid, and having a plurality of battery array modules. The reconfigurable battery array may perform charging or discharging with respect to the load or the grid, and may perform one of operations including: generating a single-phase AC voltage corresponding respectively to outputs of the battery array modules; generating a three-phase AC voltage corresponding to three battery array modules selected from the plurality of battery array modules; and generating a plurality of three-phase AC voltages in parallel from the plurality of battery array modules, and merging the three-phase AC voltages in parallel to scale power.

Three-phase expandable AC system based on battery reconfiguration and control method thereof

A firmware updating method and a firmware updating system are provided. A host can individually transmit firmware update files to a terminal device, and the host checks by an algorithm whether each of the firmware update files needs to be compressed before each of the firmware update files is transmitted. For the firmware update file that needs to be compressed, the host uses a compression algorithm to reduce a file size of the firmware update file.

Firmware updating method and firmware updating system

A wireless communication device and a dynamic anti-interference method for the same are provided. The device includes at least two wireless communication circuits. When the method operates in the wireless communication device, the device monitors activities of every wireless communication circuit through a clear channel assessment method for acquiring signal strength of every wireless communication circuit. The assessment allows the device to perform a corresponding anti-interference measure for each of the wireless communication circuits. For example, when the device acknowledges that a second wireless communication circuit of the device starts to work as a first wireless communication circuit transmits or receives signals, the device controls a receiver or a transmitter of the second wireless communication circuit to perform an anti-interference measure such as a gain control for a receiver or power adjustment for a transmitter.

Wireless communication device and dynamic anti-interference method for the same

Growing community of inventors

Taipei, Taiwan

Chien-Yu Chen