Novatek Microelectronics Corp.

Artilux Corporation

Mpi Corporation

Chien-Yu Chen

Szu-Lin Cheng

Yun-Chung Na

Shu-Lu Chen

Han-Din Liu

Ming-Jay Yang

Che-Fu Liang

Yu-Hsuan Liu

Yen-Cheng Lu

Yen-Ju Lin

Hui-Hung Chang

Kun-Yueh Lin

Chung-Chih Lin

Feng-Jung Kuo

Kai-Wen Shao

Tsung-Ting Wu

I-Te Liu

Wei-Ying Tu

Jung-Chin Chiang

Chia-Peng Lin

Chia-Wei Chang

Jiun-Ting Chen

Chieh-Ting Lin

Hsien-Wen Lo

Po-Han Peng

Chien-Chou Hung

Jung-Hsuan Sung

Chih-Chao Yang

Hui-Wen Chen

Kuan-Chen Chu

Wen-Hsin Cheng

Yu-Hsun Peng

Yi-chuan Teng

Shu-lu Chen

Yun-chung Na

Chen-Jung Chuang

Ming-Chieh Lin

Chin-Yuan Tu

Tse-Yuan Chen

Cheng-Wen Lin

Pin-Tso Lin

Chung-chih Lin

Szu-lin Cheng

Han-Yu Chuang

Wen-Pin Chou

A photodetecting device is provided. The photodetecting device includes a silicon substrate, a germanium absorption region, and a plurality of microstructures. The silicon substrate includes a first surface and a second surface. The germanium absorption region is formed proximal to the first surface of the silicon substrate, and the germanium absorption region is configured to absorb photons and to generate photo-carriers. The plurality of microstructures are formed over the second surface of the silicon substrate, and the plurality of microstructures are configured to direct an optical signal towards the germanium absorption region. A system including an optical transmitter and an optical receiver is also provided.

Photodetecting device for detecting different wavelengths

An optical sensing apparatus is provided. The optical sensing apparatus includes a substrate, one or more pixels supported by the substrate, where each of the one or more pixels includes an absorption region, a field control region, a first contact region, a second contact region and a carrier confining region. The field control region and the first contact region are doped with a dopant of a first conductivity type. The second contact region is doped with a dopant of a second conductivity type. The carrier confining region includes a first barrier region and a channel region, where the first barrier region is doped with a dopant of the second conductivity type and has a first peak doping concentration, and where the channel region is intrinsic or doped with a dopant of the second conductivity type and has a second peak doping concentration lower than the first peak doping concentration.

Optical-sensing apparatus

A wafer includes a plurality of testing dies, a plurality of non-testing dies, and a dicing region. Each testing die includes: a first active area including one or more first active devices, and one or more first device pads electrically coupled to the one or more first active devices. Each non-testing die includes: a second active area including one or more second active devices, and one or more second device pads electrically coupled to the one or more second active devices. The dicing region includes one or more testing pads electrically coupled to the one or more first device pads. The one or more testing pads are arranged to receive one or more external probes for determining one or more characteristics of the one or more first active devices of the plurality of testing dies. The plurality of non-testing dies are electrically isolated from the dicing region.

Wafer-level device measurement for optical sensors

A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×10cm, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

Light-sensing apparatus and light-sensing method thereof

A display device, a display driving integrated circuit (DDIC), and an operation method are provided. The display device includes a display panel, a first DDIC, and a second DDIC. The first DDIC generates a display synchronization signal, and drives a first display area of a display panel according to the display synchronization signal. The second DDIC is coupled to the first DDIC to receive the display synchronization signal. The second DDIC performs a frequency tracking operation on an internal clock signal of the second DDIC by selectively using the display synchronization signal. The second DDIC drives a second display area of the display panel according to the internal clock signal and the display synchronization signal.

Display device, display driving integrated circuit, and operation method

An optical detection system and a laser providing module without using an optical fiber thereof are provided. The optical detection system includes a carrier module, a laser light providing module, and an electrical detection module. The carrier module is configured to carry a plurality of photodiodes. The laser light providing module is disposed above the carrier module. The electrical detection module is adjacent to the carrier module. The laser light providing module is configured to convert a laser light source into a plurality of laser light beams, thereby simultaneously and respectively exciting two corresponding ones of the photodiodes. The electrical detection module is configured to simultaneously and electrically contact the corresponding photodiodes so as to obtain an electrical signal generated by each of the photodiodes.

Optical detection system and laser light providing module without using an optical fiber

A data transmission system is utilized in a Mobile Industry Processor Interface (MIPI). A master device includes a control module for generating a control signal according to a feedback signal. A packet encoding module is coupled to the control module for encoding an original packet to be a transmission packet according to the original packet and the control signal to process a transmission operation. A slave device includes a packet decoding module for decoding, the transmission packet to be the original packet or a related display device signal corresponding to the original packet to a display device. A feedback module is coupled to the packet decoding module for generating the feedback signal to the control module of the master device according to a decoding condition of the control module, so as to switch a transmission mode of the transmission operation.

Data transmission system and method with feedback regarding a decoding condition

A photodetecting device is provided. The photodetecting device includes a first photodetecting component including a substrate having a first absorption region configured to absorb photons having a first peak wavelength and to generate first photo-carriers, and a second photodetecting component including a second absorption region configured to absorb photons having a second peak wavelength different from the first peak wavelength and to generate second photo-carriers. The first photodetecting component further includes two first readout circuits and two first control circuits for the first photo-carriers and electrically coupled to the first absorption region. The second photodetecting component further includes two second readout circuits and two second control circuits for the second photo-carriers and electrically coupled to the second absorption region, wherein the two second readout circuits are separated from the two first readout circuits, and the two second control circuits are separated from the two first control circuit.

A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1&#xd7;10cm, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

A photo-detecting apparatus is provided. The photo-detecting apparatus includes at least one pixel, and each pixel includes N subpixels, wherein each of the subpixels comprises a detection region, two first conductive contacts, wherein the detection region is between the two first conductive contacts, wherein N is a positive integer and is &#x2265;2.

Photo-detecting apparatus with subpixels

A wafer testing method adapted to test a thin wafer. The thin wafer is combined with a vacuum-release substrate to form a wafer-assembly, and the wafer-assembly is placed in a wafer cassette. The vacuum-release substrate is attached to a front surface of the wafer with an attaching force which is sensitive to air pressure. The method includes the following steps. First, taking out the wafer-assembly from the wafer cassette, then transferring the wafer-assembly to a warpage-detection-device and placing the wafer-assembly on a first stage of the warpage-detection-device. Then, detecting warpage of the wafer. If the warpage of the wafer is less than a warpage threshold, the wafer-assembly is taken out from the first stage, and the wafer-assembly is turned over to place the wafer-assembly on a second stage. Then, applying negative pressure to the vacuum-release substrate to eliminate the attaching force. Then, removing the vacuum-release substrate.

Wafer testing method

A waveguide structure includes a first surface having a first width, a second surface having a second width, the second surface being opposite to the first surface, and a sidewall surface connecting the first surface and the second surface. The first width is greater than the second width.

Waveguide structure and optoelectronic device comprising the same

A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.

Photo-detecting apparatus

Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Multi-wafer based light absorption apparatus and applications thereof

A photodetecting device for detecting different wavelengths includes a first photodetecting component including a substrate and a second photodetecting component including second absorption region. The substrate includes a first absorption region configured to absorb photons having a first peak wavelength and to generate first photo-carriers. The second absorption region is supported by the substrate and configured to absorb photons having a second peak wavelength and to generate second photo-carriers. The first absorption region and the second absorption region are overlapped along a vertical direction.

Growing community of inventors

Hsinchu County, Taiwan

Chien-Yu Chen