Elite Semiconductor Memory Technology, Inc

Elite Semiconductor Microelectronics Technology Inc.

Chien-Yi Chang

Ming-Chien Huang

Cheng-Hung Tsai

Chung-Hsien Hua

An input buffer circuit includes an input differential amplifier unit, a differential amplifier stage, and a buffer. The input differential amplifier unit has input terminals and at least one output terminal, wherein at least two of the input terminals of the input differential amplifier unit are configured to be capacitively coupled respectively so as to provide at least one pair of signal paths for a first input signal and a second input signal of a differential input signal. The differential amplifier stage, coupled to the input differential amplifier unit, has first and second differential input terminals, and a corresponding output terminal, wherein the first and second differential input terminals are capable of being coupled to the first input signal and the second input signal respectively. The buffer, coupled to the output terminal of the differential amplifier stage, is used for outputting an output single-ended signal.

Input buffer circuit

A circuit for generating multiphase clock signals and corresponding indication signals is provided. The circuit includes a multiphase clock generation circuit, a DLL circuit, a timing circuit, and a phase comparison circuit. The multiphase clock generation circuit receives an external clock to provide a plurality of first clock signals, phases of which differ from one another. The DLL circuit receives the external clock signal to provide a second clock signal. The timing circuit receives the second clock signal and a comparison signal to provide a plurality of indication signals. Each of the plurality of indication signals has rising edges which lead the rising edges of a corresponding one of the first clock signals. The phase comparison provides the comparison signal if a delayed phase of the corresponding one of the indication signals is within a phase of one of the first clock signals.

Circuit and method for generating multiphase clock signals and corresponding indication signals

An anti-fuse circuit including a plurality of programmable units and a test module is provided. The programmable units receive a stress voltage, a program data, and a write enable signal. During a programming period, the programmable units sequentially transmit the program data. When the write enable signal is enabled, the stress voltage stresses the programmable units according to the program data, and the programmable units output programming results for test. The test module is coupled to the programmable units and receives the program data and the programming results. During a test period, the test module compares the programming results with the program data and outputs different logic levels according to a result of the comparison of the first programming results and the program data. A method for anti-fuse programming and test adapted to the foregoing anti-fuse circuit is also provided.

Anti-fuse circuit and method for anti-fuse programming and test thereof

A charge pump cell with an input and output nodes includes a first, second, and third equalization units, and a first, second, and third capacitors. The input node is coupled to the inputs of the first, second and third equalization units, and the output node is coupled to the second equalization unit. One end of the second capacitor is coupled to the control end of the first equalization unit for enabling or disabling the first equalization unit, and also coupled to the output of the third equalization unit. One end of the third capacitor is coupled to the output of the second equalization unit. One end of the first capacitor is coupled to the control ends of the second and third equalization units, and also coupled to the output of the first equalization unit.

Charge pump circuit and cell thereof

A circuit for providing a reference voltage includes a bandgap reference circuit, the bandgap reference circuit providing a first reference voltage and a data storage. The data storage stores a digital value corresponding to the first reference voltage. A digital to analog converter is coupled to the data storage for providing a second reference voltage corresponding to the digital value. The circuit also includes an output switch circuit responsive to at least one control signal, the output switch circuit providing either the first reference voltage or the second reference voltage to an output node responsive to the control signal.

Low power reference voltage circuit

A device comprising a temperature-dependent self refresh circuit for a memory device is provided where the self refresh circuit includes: a temperature sensor circuit for providing an output that reflects an operation temperature; means for switching the temperature sensor circuit to a low power state during a self refresh operation; an encoder for encoding temperature data from said output; and a programmable oscillator responsive to the encoded data to provide a temperature-dependent refresh signal for the self refresh operation.

Temperature-dependent DRAM self-refresh circuit

A timing control method for operating a synchronous memory. The synchronous memory has a local data bus, a signal amplification bus and a global data bus. The timing control method includes manipulating the local data bus, the signal amplification bus and the global bus such that a series of operations including pre-charging the local data buses, developing signals on the amplifier buses is performed evenly within one clock cycle. Amplifying and transferring local data to global data is moved to next cycle and hid within the local data pre-charging period.

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Hsinchu, Taiwan

Chien-Yi Chang