Lumentum Operations LLC

Chien-Yao Lu

Pengfei Qiao

Albert T Yuen

Yeyu Zhu

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

Mode-discriminating emitter device with an active emitter and a passive emitter

In some implementations, a semiconductor wafer includes a plurality of optical emitters, wherein an optical emitter, of the plurality of optical emitters, is associated with a receiver conducting medium for receiving wireless power transfer, wherein the receiver conducting medium is configured to couple to a wireless power transfer component for wireless power transfer at a common resonant frequency, and wherein the receiver conducting medium is configured to power the optical emitter to provide an optical output when the wireless power transfer is applied at the common resonant frequency.

Non-contact wafer-level burn-in comprising a wireless power transfer component

A vertical cavity surface emitting laser (VCSEL) may include a top contact, wherein the top contact is associated with a particular shape, and wherein the particular shape is a toothed shape with a particular quantity of teeth. The VCSEL may include at least one implanted region. The VCSEL may include at least one top contact segment.

Vertical cavity surface emitting laser mode control

A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.

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Fremont, CA, United States of America

Chien-Yao Lu