Taiwan Semiconductor Manufacturing Comp. Ltd.

National Applied Research Laboratories

TSMC Solar Ltd.

Inventec Corp.

Inventec (Pudong) Technology Corporation

Anchor Tech Co., Ltd

Chien-Yao Huang

Wun-Jie Lin

Yu-Ti Su

Chia-Wei Hsu

Chun-Heng Chen

Kuo-Cheng Huang

Yung-Sheng Chiu

Wen-Lung Lin

Tzu-Huan Cheng

Shih-Feng Tseng

Wen-Hong Wu

Cheng-Fang Ho

Wei-Yao Hsu

Hsien-Jung Hsu

Wei-Jei Peng

Ching-Hsiang Kuo

De-Cheng Liu

Capacitor cells are provided. A first PMOS transistor is coupled between a power supply and a first node, and has a gate directly connected to a second node. A first NMOS transistor is coupled between a ground and the second node, and has a gate directly connected to the first node. A second PMOS transistor is coupled between the second node and the power supply, and has a gate directly connected to the second node. A second NMOS transistor is coupled between the first node and the ground, and has a gate directly connected to the first node. Sources of the first and second NMOS transistors share an N+ doped region in the P-type well region. The first NMOS transistor is disposed between the second NMOS transistor and the first and second PMOS transistors. Source of the first PMOS transistor is directly connected to the power supply.

Capacitor cell and structure thereof

A semiconductor device includes first to fifth regions, first and second resistive loads. The first region is coupled to a first reference voltage terminal. The first to third regions operate as a first transistor. The fourth region is coupled to a second reference voltage terminal. The fourth to fifth regions operate as a second transistor. The first resistive load couples the second region to the second reference voltage terminal. The second resistive load couples the fifth region to the first reference voltage terminal. The first, third, second, fifth and fourth regions are arranged in order, each of the first, second and third regions corresponds to a first conductive type, and each of the fourth and fifth regions corresponds to a second conductive type.

Protection circuit

Capacitor cells are provided. A first PMOS transistor is coupled between a power supply and a first node, and has a gate connected to a second node. A first NMOS transistor is coupled between a ground and the second node, and has a gate connected to the first node. A second PMOS transistor is coupled between the second node and the power supply, and has a gate connected to the second node. A second NMOS transistor is coupled between the first node and the ground, a gate connected to the first node, and has a gate connected to the first node. Sources of the first and second PMOS transistors share a P+ doped region in N-type well region, and the first PMOS transistor is disposed between the second PMOS transistor and the first and second NMOS transistors.

A semiconductor device includes a first well, a first region and fourth regions of a first conductivity type as well as second regions, a third region, a second well of the second conductivity type. A first region is disposed in the first well and coupled to a first reference voltage terminal. Second regions are disposed in the first well, wherein one of the second regions is coupled to the first reference voltage terminal, and the second regions and the first well are included in a first transistor. A third region is disposed in the first well. A first resistive load is coupled between the third region and a second reference voltage terminal. A second well is coupled to the first well. Fourth regions are disposed in the second well, wherein the second well and at least one of the fourth regions are included in a second transistor.

A capacitor cell is provided. A first PMOS transistor is coupled between a power supply and a first node, and has a gate connected to a second node. A first NMOS transistor is coupled between a ground and the second node, and has a gate connected to the first node. A second PMOS transistor is coupled between the second node and the first node, and has a gate connected to the second node. A second NMOS transistor has a drain connected to the first node, a gate connected to the first node, and a source connected to the ground or the second node. The first and second PMOS transistors and the first and second NMOS transistors are arranged in the same row. The second PMOS transistor is disposed between the first PMOS transistor and the first and second NMOS transistors.

A circuit includes a first transistor, a second transistor and a first resistive load. The first transistor has a first terminal coupled to a first reference voltage terminal, a second terminal coupled to a second reference voltage terminal, and a control terminal coupled to the first reference voltage terminal. The second transistor has a first terminal coupled to the second reference voltage terminal, a second terminal coupled to the first reference voltage terminal and the control terminal of the first transistor, and a control terminal coupled to the second reference voltage terminal and the second terminal of the first transistor. The first transistor further comprises a third terminal coupled to the second reference voltage terminal through the first resistive load.

A capacitor cell is provided. A first PMOS transistor is coupled between a power supply and a first node, having a gate coupled to a second node. A first NMOS transistor coupled between a ground and the second node, having a gate coupled to the first node. A second PMOS transistor, having a drain coupled to the second node, a gate coupled to the second node, and a source coupled to the power supply or the first node. A second NMOS transistor, having a drain coupled to the first node, a gate coupled to the first node, and a source coupled to the ground or the second node.

A support device for supporting a lens includes a support component. The support component includes a main body, a plurality of first support portions and a plurality of second support portions. Each of the plurality of first support portions is disposed on the main body, has a first support position thereon having a first height, and is configured to rigidly support the lens. Each of the plurality of second support portions is disposed on the main body, has a second support position thereon having a second height, and is configured to flexibly support the lens. When a configuration relationship between the support component and the lens becomes a decoupling relationship, the second height is larger than the first height. When the configuration relationship is changed to a coupling relationship, an absolute difference value between the first and the second heights is less than a threshold.

Support device and method for supporting lens and support component for supporting functional element

Lamp equipment having a LED, a driver and a bluetooth module is disclosed. The driver is connected to the LED to control thereof, and the bluetooth module is connected to the driver for receiving power. The bluetooth module supports a mesh-network mode and a beacon mode and switches between this two modes periodically. When working under the mesh-network mode, the bluetooth module is able to execute peer-to-peer transmission with other bluetooth modules within its transmission range, and adjusts its beacon mode's status and beacon content based on received command and data. When working under the beacon mode, the bluetooth module is able to broadcast the beacon content, so as to push message externally and provide micro-location function for the outside.

Lamp equipment having multi-modes bluetooth module and mode switching method of the bluetooth module

A photovoltaic device includes a substrate, a back contact layer disposed above the substrate, and an absorber layer disposed above the back contact layer. The absorber layer includes at least two regions at respectively different horizontally locations. Each respective region has a respectively different concentration profile of an ingredient at a respective depth of the absorber layer.

Absorber layer for photovoltaic device, and method of making the same

A connection method for enhancing information security of an electronic system is disclosed. The electronic system comprises a plurality of communication devices. Each communication device is capable of establishing a plurality of wireless communication connections with another communication device. The plurality of wireless communication connections comprises a near field communication connection. The connection method comprises a first communication device and a second communication device utilizing the near field communication connection to perform a mutual verification process before the first communication device establishes a wireless connection with the second communication device, and the first communication device and the second communication device being allowed to establish a wireless communication connection of the plurality of wireless communication connections after the first communication device and the second communication device pass the mutual verification process.

Connection method for enhancing information security

A method of fabricating a photovoltaic device includes a step of forming an absorber layer above a substrate, and a step of forming a surface layer on the absorber layer. The absorber layer includes an I-III-VIcompound, which contains a Group I element, a Group III element and a Group VI element. The surface layer includes an I-III-VIcompound, which contains a Group I element, a Group III element and a Group VI element, and has an atomic ratio of the Group I element to the Group III element in the range of from 0.1 to 0.9.

Method of making photovoltaic device comprising an absorber having a surface layer

A method and system provide for depositing a TCO, transparent conductive oxide, film in one chamber of a manufacturing tool then irradiating the TCO film with light energy in another chamber of the same tool. The TCO film is used in a solar cell and formed on a solar cell substrate in some embodiments. The method includes irradiating the TCO film for a time and energy to reduce resistance of the TCO film without reducing transmittance. One or multiple light sources are used in the light irradiation chamber. Light in the infrared range, visible light range and ultraviolet light range are used either individually or in combination.

Method and apparatus for resistivity and transmittance optimization in TCO solar cell films

A cutting device for cutting a hard-brittle material along a cutting path is provided. The cutting device includes a cooling source having a first output terminal for providing a first cooling effect along the cutting path, and a heating source having a second output terminal disposed in the first output terminal for providing a heating effect following the first cooling effect along the cutting path.

Growing community of inventors

Taipei, Taiwan

Chien-Yao Huang