United Microelectronics Corp.

Chien-Wen Lai

I-Hsiung Huang

Anseime Chen

Chih-Yung Lin

Chien-Ming Wang

Chemg-Shyan Tsay

Feng-Yuan Chang

Anderson Chang

In accordance with the present invention, a method is provided for improving process window in semi-dense area by using a phase shifter. This method comprises a step of providing a transparent substrate. Then, at least two opaque regions are formed on the substrate. A phase shifter is formed in the substrate, wherein the phase shifter is formed in-between adjacent opaque regions. As a result, the phase shifter shifts the incident beam at an angle that reduces the proximity effect and improves the optical contrast and the depth of focus (DOF) to get wider process window.

Method for improving process window in semi-dense area by using phase shifter

A phase error monitor pattern and its related applications. The phase error monitor pattern includes an alternating phase shift pattern on the peripheries of an alternating phase shift mask and a modification pattern on the peripheries of a modification pattern. The alternating phase shift mask and the modification mask are used in sequence. The alternating phase shift pattern has a plurality of pairs of first non-transparent regions. Each pair of first non-transparent regions is located at each side of a phase shift region. The modification pattern has a plurality of second non-transparent regions. Each second non-transparent region corresponds in position to the non-transparent region on a first side of each pair of first non-transparent regions. The method of monitoring phase errors includes sequentially performing photo-exposure of a positive photoresist using the alternating phase shift mask and the modification mask and measuring the deviations of the monitor photoresist pattern. Finally, phase error of the alternating phase shift mask is deduced according to the measured shift and the defocusing of the exposure light source.

Phase error monitor pattern and application

The present invention provides An alternating phase shifting mask (Alt-PSM), that is to be used in a double exposure lithographic process with a light source of 248 nm. The Alt-PSM comprises: (1) a quartz substrate; (2) at least one semi-dense line on the substrate, wherein the semi-dense line is adjacent to a clear region with a width larger than 2 nm on one side and on the other side is adjacent to a dense-line pattern with a narrow pitch; (3) a first phase shifting region, which is located between the dense line pattern and the semi-dense line pattern and is adjacent to the semi-dense line; and (4) a second phase shifting region with a predetermined width, which is adjacent to the semi-dense line and located on the side opposite to the first phase shifting region; wherein the phase difference between the first phase shifting region and the second phase shifting region is 180 degree.

Alternating phase shifting mask

A thermal flow photolithographic process. A thermal flow photoresist is provided. A cross-linking agent is added to the thermal flow photoresist to form a high-temperature cross-linking photoresist material. A substrate having an insulation layer thereon is provided. The high-temperature cross-linking photoresist is deposited over the insulation layer. The cross-linked photoresist layer on the insulation layer is exposed to light, chemically developed and then heated to cause thermal flow.

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Taipei Hsien, Taiwan

Chien-Wen Lai