Applied Materials, Inc.

Chien-Teh Kao

Mei Yin Chang

Xinliang Lu

Joel M Huston

Zhenbin Ge

Tae Kyung Won

Son Trinh

Wei W Wang

Soo Young Choi

Joseph Yudovsky

Dien-Yeh Wu

Yu Wen Chang

Sanjay D Yadav

See-Eng Phan

Haichun Yang

Xiaoxiong (John) Yuan

Shinichi Kurita

Carl A Sorensen

Sal Umotoy

Jing-Pei (Connie) Chou

Chiukin (Steven) Lai

Paul F Ma

Karl Anthony Littau

Jianhua Zhou

Xiangxin Rui

David T Or

Kenneth Tsai

Faruk Gungor

Hyman W H Lam

David Chu

Young Dong Lee

Chiukin Steve Lai

Nitin K Ingle

Roderick Craig Mosely

Salvador P Umotoy

Shouqian Shao

Nicholas Ryan Denny

Ronald Lloyd Rose

Ilker Durukan

Quyen Pham

Young Eun Lee

Calvin R Augason

Jeffrey A Kho

Hyman Lam

Juno Yu-Ting Huang

Li-Qun Xia

Srinivas Gandikota

Michael Xiaoxuan Yang

Avi Tepman

Hichem M'Saad

Mihaela A Balseanu

Zheng Yuan

James S Papanu

Reza Arghavani

Yu Lei

Suhail Anwar

Bo Zheng

Yihwan Kim

Derek R Witty

Satheesh Kuppurao

Yi Zheng

Xiaoxiong Yuan

Lawrence Chung-Lai Lei

Anzhong Chang

Mark Naoshi Kawaguchi

Benjamin Schmiege

Andrew C Lam

Ken Kaung Lai

Siqing Lu

Vikash Banthia

Henry Ho

Sergio Edelstein

Jing Tang

Victor Nguyen

Bingxi Sun Wood

Chiukin Steven Lai

Xuesong Lu

Nan Lu

Pingyan Lei

Hoiman Raymond Hung

William Kuang

Ping Jian

William H McClintock

Hua Ai

Steven Yencheng Chen

Ying Yu

Rajkumar Jakkaraju

Chikuang Charles Wang

Anand Vasudev

Benjamin C Wang

Yung-Hsin Lee

Bevan Vo

Ghazal Saheli

Jing-Pei Chou

Be Van Vo

Guangwei Sun

Chiukun Steven Lai

Dong Won Koo

Wie W Wang

Embodiments of the present disclosure generally relate to a lid suitable for use in a semiconductor processing chamber. The lid includes a plurality of dielectric windows coupled to a perforated faceplate. The lid also includes a plurality of support members coupled to the perforated faceplate and positioned between adjacent dielectric windows. The lid further includes a plurality inductive couplers. One or more of the inductive couplers includes a first lower portion, a second lower portion, and a bridge. The bridge is disposed over at least one of the plurality of support members. The first lower portion is positioned on a first dielectric window of the plurality of dielectric windows. The second lower portion is positioned on a second dielectric window of the plurality of dielectric windows. The second dielectric window is adjacent to the first dielectric window.

Multi-antenna unit for large area inductively coupled plasma processing apparatus

Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

Film stress control for plasma enhanced chemical vapor deposition

Embodiments described herein provide a gas supply system for reducing purge time and increasing processing throughput, and an atomic layer deposition (ALD) chamber having the same. The gas supply system includes an inert gas line and a precursor supply line. The inert gas line is configured to be coupled to an inlet of the chamber separate from the precursor supply line. Therefore, the inert gas is supplied concurrently to the precursor supply line and the processing region of the chamber such that total purge time is reduced. The reduction of the total purge time due to the gas supply system increases purge efficiency and increases processing throughput. Furthermore, the gas supply system allows inert gas to be utilized as a dilution gas during flow of precursors.

ALD process and hardware with improved purge efficiency

The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) chamber. In one embodiment, a lid assembly is provided that includes a multi-channel showerhead having a plurality of first gas channels and a plurality of second gas channels that are fluidly isolated from each of the first gas channels, and a flow guide coupled to opposing sides of the multi-channel showerhead, each of the flow guides being fluidly coupled to the plurality of second gas channels.

Methods and apparatus for ALD processes

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Apparatus and method for providing uniform flow of gas

Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.

High temperature process chamber lid

The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.

Remote plasma source cleaning nozzle for cleaning a gas distribution plate

Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas and a gas flow outlet guide to effectively purge process gasses and reduce purge time. The chamber includes a chamber body having a process gas inlet and a process gas outlet, a lid assembly, a process gas inlet and a process gas outlet configured to be in fluid communication with a processing region in the chamber, a gas flow inlet guide disposed in the process gas inlet, and a gas flow outlet guide disposed in the process gas outlet. The gas flow inlet guide includes a flow modulator and at least two first inlet guide channels having first inlet guide channel areas that are different. The gas flow outlet guide includes at least two first outlet guide channels having first outlet guide channel areas that are different.

Gas flow guide design for uniform flow distribution and efficient purge

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

Support assembly

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Dual-direction chemical delivery system for ALD/CVD chambers

Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.

CVD thin film stress control method for display application

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Sunnyvale, CA, United States of America

Chien-Teh Kao