Atomic Energy Council-institute of Nuclear Energy Research

Atomic Energy Council

Chien-Te Ku

Tsun-Neng Yang

Shan-Ming Lan

Wei-Yang Ma

Chin-Chen Chiang

Yu-Hsiang Huang

Zhen-Yu Li

Meng-Chu Chen

Yu-Han Su

Ying-Ru Chen

A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a titanium film in an e-gun evaporation system. Dichlorosilane is provided on the titanium film by atmospheric pressure chemical vapor deposition. A titanium-based compound film is formed on the ceramic substrate.

Method for making titanium-based compound film of poly silicon solar cell

There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles

A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

Method for making a silicon quantum dot fluorescent lamp

A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p-type back surface field layer on the titanium-based film, the step of providing a p-type light-soaking layer on the p-type back surface field layer and the step of conducting n-type diffusive deposition of phosphine on the p-type light-soaking layer based on atmospheric pressure chemical vapor deposition, thus forming an n-type emitter on the p-type light-soaking layer.

Method for making multi-crystalline film of solar cell

In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.

Pulsed high-voltage silicon quantum dot fluorescent lamp

A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a ptype poly-silicon back surface field, a ptype poly-silicon light-soaking film and an ntype poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the ntype poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the ptype poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the ptype poly-silicon back surface field. Finally, the ntype poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO.

Method for making an anti-reflection film of a solar cell

Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a ptype back surface field film. The temperature is raised to grow a ptype light-soaking film on the ptype back surface field film. Phosphine is deposited on the ptype light-soaking film to form an ntype emitter. Thus, an n-p-plaminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n-p-plaminate, thus forming an anti-reflection film of SiCN/SiO2 on the ntype emitter. The n-p-plaminate is etched in a patterned mask process. A ptype ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The ntype emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An ntype ohmic contact is formed on the ntype emitter.

Process for making multi-crystalline silicon thin-film solar cells

A method for making a tandem solar cell includes the steps of providing a ceramic substrate, providing a titanium-based layer on the ceramic substrate, providing an n-p-plaminate on the titanium-based layer, passivating the n-p-plaminate, providing an n-i-p laminate on the n-p-plaminate, providing a p-type ohmic contact, providing an n-type ohmic contact providing an anti-reflection layer of SiCN/SiOon the n-i-p laminate.

Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer

A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a ppoly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a ppoly-crystalline silicon film is coated on the ppoly-crystalline silicon film, and an npoly-crystalline silicon film is coated on the ppoly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the npoly-crystalline silicon film. An anti-reflection film is coated on the npoly-crystalline silicon film.

Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature

A solar cell is prepared. The solar cell is photo-sensitized. The solar cell has a semiconductor layer. And carbon nanotubes are deposited on the semiconductor layer with an arrangement. The solar cell is prepared with a reduced amount of fabrication material, a lowered fabrication cost and a prolonged lifetime.

Preparing method of CNT-based semiconductor sensitized solar cell

A structure is formed by putting glass plates between a luminescence generating device and an electron emitting device so that a vacuum is formed in between. After in putting a high-voltage, an electron beam is emitted from the electron emitting device using low power. In the end, silicon quantum dots in the luminescence generating device are excited to generate a white light. The present invention has a good optoelectronic transformation efficiency.

Growing community of inventors

Taoyuan County, Taiwan

Chien-Te Ku