Au Optronics Corporation

Unipac Optoelectronics Corporation

Unipac Optoelecyronics Corp.

Chien-Sheng Yang

Fang-Chen Luo

A fabricating method of a pixel structure is disclosed. The pixel structure is disposed on a substrate. The pixel structure comprises a scan line, a data line, an active element, a capacitor electrode, a pixel electrode and an electric field shielding layer. The fabricating method of the pixel structure comprises forming the scan line, the data line and the active element on the substrate first. The scan line and the data line are electrically coupled to the active element. Then, the capacitor electrode and the electric field shielding layer are formed on the substrate. Finally, the pixel electrode is formed on the substrate, covering the capacitor electrode and electrically coupled to the active element. The pixel electrode and the capacitor electrode form a pixel storage capacitor. The electric field shielding layer can avoid the interference between the data line and the pixel electrode.

Fabricating method of a pixel structure having electrical field shielding layer and storage capacitor with three transparent electrodes

A liquid crystal display (LCD) with improved motion image quality. The LCD displays a frame during a frame time. A pixel of the LCD has a first switch and a second switch. At a first time point, the first switch is turned on by a video scan line, and a video data signal is transmitted to the pixel through a video data line, which make the pixel have first luminance intensity. At a second time point, the second switch is turned on by a particular color signal scan line, and a particular color data signal is transmitted to the pixel through a particular color signal data line, which make the pixel have second luminance intensity smaller than the first luminance intensity. A time interval between the second time point and the first time point is smaller than the frame time and the image dragging phenomenon is avoided.

Liquid crystal display with improved motion image quality and a driving method therefor

An ion sensitive field effect transistor (ISFET) and a fabrication method of the same are disclosed including a non-single-crystal silicon-base substrate, a polysilicon layer, a source, a drain, an insulating layer, a first electrode, a second electrode, a passivation layer, and an ion sensitive gate. The polysilicon layer is formed above the non-single-crystal silicon-base substrate, the source and the drain are formed in the polysilicon layer, and a predetermined channel region is formed in the polysilicon layer between the source and the drain. The insulating layer is formed above the polysilicon layer including a first contact hole and a second contact hole. The first electrode and the second electrode are electrically couple to the source and the drain by the first contact hole and the second contact hole, respectively. The passivation layer is formed above the insulating layer covering the first electrode and the second electrode, including an opening, which partially exposes the insulating layer above the predetermined channel region. The ion sensitive gate is formed in the opening above the insulating layer.

Fabrication method of an ion sensitive field effect transistor

A pixel structure and fabricating method thereof is provided. The pixel structure includes a scan line, a data line, an active component, a plurality of transparent capacitance electrodes and a pixel electrode. First, an active component, a scan line and a data line are formed over a substrate, wherein the active component is electrically connected to the scan line and the data line. In addition, a plurality of transparent capacitance electrodes are formed over the substrate. Next, a pixel electrode is formed over the transparent capacitance electrode and electrically connected to the active component. Thus, the pixel electrode and the transparent capacitance electrodes constitute a multilayer pixel storage capacitor. Since the pixel storage capacitor is comprised of transparent material, and being a multilayer structure, the capacitance of the pixel storage capacitor and the aperture ratio of the pixel structure respectively are increased.

Pixel structure and manufacturing method thereof

A fingerprint sensor for sensing a fingerprint has a detecting and processing circuit and a plurality of sensing units. Each of the sensing units has a switch element, a first resistor, and a second resistor. The switch element has a first terminal, a second terminal, and a third terminal. Resistance of the second resistor is fixed. The fingerprint influences an intensity of light illuminating the first resistor so that resistance of the first resistor and a voltage level of the second terminal change. When the switch elements are turned on, the detecting and processing circuit analyzes the fingerprint according to the voltage levels of the second terminals of the plurality switch elements.

Optical fingerprint sensor with variable resistors

A pixel structure and a fabricating method thereof are disclosed. The pixel structure is disposed on a substrate. The pixel structure comprises a scan line, a data line, an active element, a capacitor electrode, a pixel electrode and an electric field shielding layer. The fabricating method of the pixel structure comprises forming the scan line, the data line and the active element on the substrate first. The scan line and the data line are electrically coupled to the active element. Then, the capacitor electrode and the electric field shielding layer are formed on the substrate. Finally, the pixel electrode is formed on the substrate, covering the capacitor electrode and electrically coupled to the active element. The pixel electrode and the capacitor electrode form a pixel storage capacitor. The electric field shielding layer can avoid the interference between the data line and the pixel electrode.

Pixel structure having electrical field shielding layer and transparent capacitor electrodes

A polysilicon thin film transistor liquid crystal display (polysilicon TFT LCD) has a panel, a common voltage layer, a plurality of display cells, a plurality of scan lines, a plurality data lines, and a plurality common voltage drivers. The scan lines and the data lines are coupled to the display cells. Each of the common voltage drivers is formed in the panel and is used to generate a common voltage and to apply the common voltage to the common voltage layer.

Polysilicon thin film transistor liquid crystal display having a plurality of common voltage drivers

A digital display driving circuit is provided for driving a light emitting diode (LED) display to generate video images. The digital display driving circuit comprises a digital gamma-correction circuit for performing a digital gamma-correction process on the digitized video data to produce the desired video signals. An LED timing control circuit is applied for converting a plurality of timing signals into an LED timing control signal. And a PWM and shutdown circuit is applied for supplying power to the LED display and shutting down the LED display when the LED display has been idle for a preset period.

Digital display driving circuit for light emitting diode display

A capacitor in a pixel structure deposited under a pixel electrode comprises a top electrode, a bottom electrode, and a dielectric layer between the top electrode and the bottom electrode. The top electrode comprises a coupling part and a protruding part, wherein the coupling part corresponds to the bottom electrode for forming a coupling region between the coupling part and the bottom electrode, and the protruding part exceeds the coupling region. Furthermore, a passivation layer covers the top electrode, and an opening formed in the passivation layer exposes the protruding part of the top electrode. The pixel electrode is on the passivation layer and electrically connects with the top electrode through the opening.

Capacitor in a pixel structure

A complementary metal oxide semiconductor (CMOS) image sensor includes at least a non-single-crystal-silicone-base substrate, an opaque layer, a polysilicon layer, a source, a drain, a gate dielectric layer, a first transparent gate electrode, and a second gate transparent gate electrode. The opaque layer is formed on the non-single-crystal-silicone-base substrate, and the polysilicon layer, formed on the opaque layer, has a charge-generating region. The source and the drain are formed in the polysilicon layer, and a pre-channel region is formed between the source and the drain. The source is located between the pre-channel region and the charge-generating region. The gate dielectric layer is formed on the polysilicon layer, and the first and the second transparent gate electrodes, formed on the gate dielectric layer, are respectively located above the charge-generating region and the pre-channel region.

Complementary metal oxide semiconductor image sensor and method of manufacturing the same

A capacitive acceleration sensor includes a non-single-crystal-silicon-based substrate, a polysilicon beam structure having a movable section that includes a movable electrode, a polysilicon supporter positioned on the non-single-crystal-silicon-based substrate for fixing the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate, a stationary electrode positioned on the non-single-crystal-silicon-based substrate and opposite to the movable section of the beam structure, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate. The stationary electrode and the movable electrode constitute a plate capacitor, and the TFT control circuit is electrically connected to the plate capacitor.

Capacitive acceleration sensor

A semiconductor pressure sensor comprises a non-single-crystal-silicon-based substrate, a movable insulating diaphragm, at least one piezoresistor positioned on the insulating diaphragm, an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing two ends of the insulating diaphragm and forming a cavity between the insulating diaphragm and the non-single-crystal-silicon-based substrate, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the insulating diaphragm and the piezoresistor.

Semiconductor pressure sensor

An digital-to-analog converting circuit of a display, used for a current-type data driver. The digital-to-analog converting circuit is characterized in that the ratio of channel-width to channel-length (W/L) for each transistor thereof is identical, such that no deviation occurs to the current of data output.

Digital-to-analog converting circuit with transistors having a same ratio of channel-width to channel-length

An object of the present invention is to provide a driving method of bias compensation for thin-film-transistor liquid-crystal-display (TFT-LCD) comprising the following steps: during a positive field period, applying a first low-level gate voltage to drive a gate line; wherein the first low-level gate voltage has a first waveform, the LCD voltage is fully charged at the beginning of the positive field period and partially discharged at the end of the positive field period to have a first voltage vibration amplitude; during a negative field period, applying a second low-level gate voltage to drive the gate line; wherein the second low-level gate voltage has a second waveform, the LCD voltage is fully recharged at the beginning of the negative field period and partially discharged at the end of the negative field period to have a second voltage vibration amplitude. By adjusting the first and the second waveforms, the root-mean-square of the LCD voltage during the positive field period is approximately equal to the root-mean-square of the LCD voltage during the negative field period.

Driving method of bias compensation for TFT-LCD

An organic light emitting diode (OLED) structure, and corresponding method of making same are provided. Each OLED pixel includes a first electrode layer on a substrate, a second electrode layer on a substrate, and an organic emission layer disposed between the first and second electrode layers so as to emit visible light when a suitable potential is applied thereto by the electrodes. In accordance with certain embodiments of this invention, a coverage layer is provided over the edge portion of the first electrode layer in order to control the emission region thereby improving the uniformity of image manifestation.

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Taipei, Taiwan

Chien-Sheng Yang