Au Optronics Corporation

Lextar Electronics Corporation

Auo Corporation

Au Optrinics Corp.

Chien-Sen Weng

Chih-Wei Chao

Kuo-Lung Fang

Chia-Tien Peng

Kun-Chih Lin

Chrong-Jung Lin

Ya-Chin King

An-Thung Cho

Chia-Hui Chung

Ming-Wei Sun

Mao-Yi Chang

Kuo-Jui Chang

Chi-Sheng Chiang

Chao-Shun Liao

Yi-Wei Chen

Feng-Yuan Gan

Ching-Chieh Shih

Wen-Tai Chen

Ming-Huang Chuang

Wen-Jen Chiang

Yu-Chuan Liao

Yuan-Jun Hsu

Hang-Wei Tseug

Masataka Itoh

Chih-Yang Chen

A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Thin film transistor

Display screen or portion thereof with an icon

Provided is a display panel, including a substrate, multiple pixel circuits, an insulating layer, multiple first electrodes, a first isolation structure, and a second isolation structure. The pixel circuits are located on the substrate. The insulating layer is located on the pixel circuits and has multiple through holes. The first electrodes are located on the insulating layer and are respectively electrically connected to the pixel circuits through the through holes. The first isolation structure is located on the insulating layer and overlaps the through holes. The second isolation structure includes multiple separating parts and multiple cover parts. The separating parts and the first isolation structure at least partially overlap, and the cover parts respectively overlap the through holes and the first isolation structure.

Display panel

A display panel includes a substrate, a first isolation structure, a second isolation structure and a plurality of light emitting structures. The first isolation structure is disposed on the substrate and includes a plurality of through holes. The second isolation substrate is laminated on the first isolation substrate and fills up the plurality of through holes of the first isolation substrate. The plurality of light emitting structures are disposed on the substrate and are isolated from each other via the second isolation structure.

An organic light-emitting panel, including a substrate, a planarization layer, a reflective layer and a bank layer, is provided. The substrate has a display region and a periphery region beside the display region. The planarization layer is disposed on the substrate and has an indentation. The reflective layer is disposed on the planarization layer. The reflective layer is formed along a sidewall of the indentation. The bank layer is disposed on the planarization layer, covers the indentation, and has a periphery taper surface. The indentation is adjacent to the periphery taper surface and is closer to the display region than the periphery taper surface. A fabrication method of the above organic light-emitting panel is also provided.

Organic light-emitting panel and fabrication method thereof

A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Manufacturing method of thin film transistor array substrate and liquid crystal display panel

A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

Light emitting diode

In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers.

Fabricating method of light emitting diode chip

A display device includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a passivation layer covering the switching device and the capacitor, and a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings exposing the contact pads.

Display device having heating layer and method of making the same

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Method for fabricating light emitting diode chip

An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.

Optical reflected touch panel and pixels and system thereof

A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

Growing community of inventors

Hsinchu, Taiwan

Chien-Sen Weng