Industrial Technology Research Institute

Chien-Ping Wang

Tzung-Te Chen

Pei-Ting Chou

Chun-Fan Dai

Han-Kuei Fu

Yi-Keng Fu

Hsun-Chih Liu

An-Tse Lee

Yen-Liang Liu

Sheng-Bang Huang

Shang-Ping Ying

Yi-Ping Peng

Shih-Chun Yang

A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.

Testing method and testing system for semiconductor element

The present disclosure relates to a method for measuring thermal electric characteristics of a semiconductor device, including the steps of: providing at least one current to the LED device over a time interval; recording a voltage transient response of the LED device, wherein the voltage transient response has a plurality of time segments different in gradient; computing a voltage difference from one of the plurality of time segments in the voltage transient response; and determining whether the LED device is defective based on the voltage difference, wherein the voltage difference is thermal dependent. The present disclosure also provides a testing method for defining a plurality of time segments.

Method of measuring thermal electric characteristics of semiconductor device

An apparatus for measuring of a curvature of a thin film, is adapted to measure the curvature of a thin-film. The apparatus includes a light emitting module, a first optical module, a second optical module, a third optical module, an image capture module, and an image analysis module. The light emitting module emits at least one line laser as an incident light whose cross-sectional shape is a geometric picture formed of lines. The incident light is transmitted through a first optical path formed of the first optical module, and is directed to incident the thin film by the second optical module. The reflected light is reflected by the thin film go through the second optical path, and is directed to transmit through the third optical path by the third optical module, and then is captured by the capture module to form a second geometric picture.

Thin-film curvature measurement apparatus and method thereof

The disclosure discloses a light emitting diode testing apparatus, which includes a power supply module, a probe, a control unit and a data acquisition unit. The power supply module provides a first current or a second current to a testing item. The probe measures characteristics of the testing item. The control unit controls the power supply module to provide the first current or the second current. The data acquisition unit acquires the characteristics of the testing item from the probe. The power supply module includes a first current source, at least one second current source and at least one protector. The first current source provides the first current to the testing item. The at least one second current source provides at least one additional current. The at least one protector prevents the first current from feeding back to the at least one second current source.

Testing apparatus

A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.

Method and apparatus for detecting relationship between thermal and electrical properties of semiconductor device

An inspection system is provided, which applies a forward or reverse voltage on a light-emitting device and measures a current thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a current difference before and after the temperature rise is larger than a failure current determination value. Alternatively, the inspection system adopts a current applying device to apply a forward and reverse current on a light-emitting device and measures a voltage difference thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a difference of the voltage differences before and after the temperature rise is larger than a failure voltage determination value. Alternatively, the inspection system adopts a predetermined inspecting step and a rapid inspecting step respectively to determine whether a light-emitting device fails. An inspection method for the inspection system is also provided.

Growing community of inventors

Hsinchu County, Taiwan

Chien-Ping Wang