Taiwan Semiconductor Manufacturing Comp. Ltd.

Chien Nan Tu

Ming-Chi Wu

Yu-Lung Yeh

Chi-Yuan Wen

Chien-Chang Huang

Kun-Yu Lin

Shih-Shiung Chen

Po-Han Huang

Ji Heng Jiang

Hsin-Yi Kuo

Chun-Chieh Fang

Bo-Chang Su

Li-Ming Sun

Kuo-Cheng Lee

Yun-Wei Cheng

Ming-Hsien Wu

Chun-Wei Chia

Ming-Hsien Yang

Chun-Liang Lu

Wei-Chih Weng

Yi-Ping Pan

ChunHao Lin

Kuo-cheng Lee

Tse Yu Tu

Chun-hao Chou

A CMOS image sensor includes a unit pixel array including a photodiode array, a color filter array, a micro-lens array, and a grid isolation structure laterally separating adjacent color filters. The grid isolation structure includes a first low-n grid, a second low-n grid underlying the first low-n grid, and a metal grid within the second low-n grid, the first low-n grid being narrower than the second low-n grid. The color filter array includes color filter matrixes, all color filter matrixes have the same arrangement pattern. Sizes of color filters in each color filter matrix vary depending on locations of the color filters in the color filter matrix. In an edge portion, a distance between a center of a color filter matrix and a center of a corresponding unit pixel matrix in plan view varies depending on a location of the unit pixel matrix in the CMOS image sensor.

CMOS image sensor and method for making the same

A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

Deep trench isolation structures resistant to cracking

A near infrared sensing device includes a near infrared light sensor configured to detect infrared light at least at a design-basis infrared wavelength, and a surface plasmon polariton structure including at least an embedded grating that is embedded in a light-receiving surface of the near infrared light sensor. The surface plasmon polariton structure is configured to couple with light at the design-basis infrared wavelength to form a surface plasmon polariton at the light-receiving surface of the near infrared light sensor. The surface plasmon polariton structure may further include a metal grating disposed on the light-receiving surface of the near infrared light sensor and aligned with the embedded grating. The embedded grating may comprise an embedded metal grating that is embedded in the light-receiving surface of the near infrared light sensor, or trenches formed in the light-receiving surface of the near infrared light sensor and at least partially filled with air.

Near infrared light sensor with improved light coupling and CMOS image sensor including same

An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

Image sensor with a high absorption layer

The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

QE approach by double-side, multi absorption structure

An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

Image sensor with an absorption enhancement semiconductor layer

Growing community of inventors

Kaohsiung, Taiwan

Chien Nan Tu