United Microelectronics Corp.

Htc Corporation

Chien-Liang Lin

Yu-Ren Wang

Ying-Wei Yen

Shao-Wei Wang

Tsuo-Wen Lu

Wen-Yi Teng

Te-Lin Sun

Shih-Hung Tsai

Chin-Cheng Chien

Chih-Chung Chen

Chien-Ting Lin

Ssu-I Fu

Shu-Yen Chan

Ying-Tsung Chen

Keng-Jen Lin

Cheng-Hao Chin

Gin-Chen Huang

Shin-Yun Lin

Chun-Hsien Lin

Chan-Lon Yang

Chih-Wei Yang

Neng-Hui Yang

Wei-Jen Chen

Chia-Lung Chang

Wen-Tai Chiang

Jei-Ming Chen

Ted Ming-Lang Guo

Yi-Ching Wu

Chun-Wei Hsu

Chun-Li Wang

Yun-Ren Wang

I-Ming Lai

Yu-Tung Hsiao

Yu-Min Lin

Kun-Yuan Lo

Tsung-Yu Hou

Wu-Chun Kao

Ying-Hsuan Li

A head-mounted display and projecting method are provided. The display determines an eye gaze position of a user on a display screen at each of a plurality of time points based on an eyeball trajectory. The display determines whether the eye gaze position of the user on the display screen moves from a first horizontal display area to a second horizontal display area among a plurality of horizontal display areas, and the display screen includes a target projection object in the first horizontal display area. In response to the eye gaze position of the user on the display screen moving from the first horizontal display area to the second horizontal display area, the display tilts the target projection object of the display screen toward the second horizontal display area.

Head-mounted display and projecting method

A semiconductor structure includes a dielectric layer located on a substrate, wherein the dielectric layer includes nitrogen atoms, and the concentration of the nitrogen atoms in the dielectric layer is lower than 5% at a location wherein the distance between this location in the dielectric layer to the substrate is less than 20% of the thickness of the dielectric layer. Moreover, the present invention provides a semiconductor process including the following steps: a dielectric layer is formed on a substrate. Two annealing processes are performed in-situly on the dielectric layer, wherein the two annealing processes have different imported gases and different annealing temperatures.

Semiconductor structure and process thereof

A gate forming process includes the following steps. A gate dielectric layer is formed on a substrate. A barrier layer is formed on the gate dielectric layer. A silicon seed layer and a silicon layer are sequentially and directly formed on the barrier layer, wherein the silicon seed layer and the silicon layer are formed by different precursors.

Gate and gate forming process

A semiconductor process includes the following steps. A dielectric layer is formed on a substrate. A barrier layer is formed on the dielectric layer. An ammonia thermal treatment process with a processing temperature of 650&#xb0; C.&#x2dc;700&#xb0; C. and a nitrogen containing gas annealing process with a processing temperature of 900&#xb0; C.&#x2dc;1000&#xb0; C. are sequentially performed on the barrier layer. The present invention also provides a semiconductor process including the following steps. A dielectric layer is formed on a substrate. A first nitrogen containing thermal treatment process is performed on the dielectric layer. A barrier layer is formed on the dielectric layer. A second nitrogen containing thermal treatment process and then an annealing process are performed in-situ on the barrier layer.

Semiconductor process

A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer.

Method for fabricating shallow trench isolation structure

A method for gradually adjusting screen brightness when switching an operating system is provided. The method is used for gradually adjusting the brightness of a screen of an electronic device by a controller thereof when the electronic device is switched from to first operating system to a second operating system. First, an operating system switching signal is received. Then, a first brightness value of the first operating system is obtained. The screen brightness is gradually adjusted from the first brightness value to a predetermined second brightness value. Afterwards, the first operating system is switched to the second operating system, and the screen brightness is further adjusted from the second brightness value back to the first brightness value. Accordingly, a user can sense the switching of the operating system more intuitively and has enough time to get used to the change of the screen brightness and the displayed frame.

Method for gradually adjusting screen brightness when switching operating system

The present invention provides a method of forming an isolation structure. A substrate is provided, and a trench is formed in the substrate. Next, a semiconductor layer is formed on a surface of the trench. A nitridation is carried out to form a nitridation layer in the semiconductor layer. Lastly, an insulation layer is filled into the trench.

Method of forming isolation structure

A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.

Method for processing high-k dielectric layer

The method of forming a polysilicon layer is provided. A first polysilicon layer with a first grain size is formed on a substrate. A second polysilicon layer with a second grain size is formed on the first polysilicon layer. The first grain size is smaller than the second grain size. The first polysilicon layer with a smaller grain size can serve as a base for the following deposition, so that the second polysilicon layer formed thereon has a flatter topography, and thus, the surface roughness is reduced and the Rs uniformity within a wafer is improved.

Polysilicon layer and method of forming the same

A mobile device and a method for sharing a hardware device thereof are provided. Two operation systems are executed on the present mobile device simultaneously, and an embedded controller is configured to communicate among the two operation systems and a shared hardware device of the mobile device. When one of the operation systems encodes an operating command into a uniform message and transmits the uniform message to the embedded controller, the uniform message is decoded into the operating command by the embedded controller such that the hardware device operates according to the decoded operating command. On the other hand, when the embedded controller receives input data from the hardware device, the embedded controller encodes the input data into the uniform message and transmits the uniform message to one of the operation systems. The operation system receiving the uniform message decodes the uniform message into the input data.

Mobile device with two operating systems and method for sharing hardware device between two operating systems thereof

A semiconductor process includes the following steps. A substrate having a recess is provided. A decoupled plasma nitridation process is performed to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess. A nitrogen containing annealing process is then performed on the nitrogen containing liner.

A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.

Semiconductor structure and fabrication method thereof

A method and an electronic device for synchronizing information of dual operating systems and a recording medium are provided. The method is used for synchronizing information of a first operating system and a second operating system when an electronic device is switching from a first operating system to a second operating system. First, the second operating system sends an information requesting message to a controller of the electronic device when the first operating system is switched to the second operating system. The controller checks if the first operating system operates in a work mode. If the first operating system operates in the work mode, the controller forwards the information requesting message to the first operating system, so as to obtain the information of the first operating system. Finally, the second system synchronizes the information recorded therein according to the obtained information.

Method and electronic device for synchronizing information of dual operating systems and recording medium

A process for fabricating a semiconductor device is described. A silicon oxide layer is formed. A nitridation process including at least two steps is performed to nitridate the silicon oxide layer into a silicon oxynitride (SiON) layer. The nitridation process comprises a first nitridation step and a second nitridation step in sequence, wherein the first nitridation step and the second nitridation step are different in the setting of at least one parameter.

Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor device

A method for gradually adjusting screen brightness when switching an operating system is provided. The method is used for gradually adjusting the brightness of a screen of an electronic device by a controller thereof when the electronic device is switched from a first operating system to a second operating system. First, an operating system switching signal is received. Then, a first brightness value of the first operating system is obtained. The screen brightness is gradually adjusted from the first brightness value to a predetermined second brightness value. Afterwards, the first operating system is switched to the second operating system, and the screen brightness is further adjusted from the second brightness value back to the first brightness value. Accordingly, a user can sense the switching of the operating system more intuitively and has enough time to get used to the change of the screen brightness and the displayed frame.

Growing community of inventors

Taoyuan County, Taiwan

Chien-Liang Lin