Macronix International Co., Ltd.

Synopsys, Inc.

Chien-Hung Lu

Chin-Ta Su

Tung-Chieh Chen

Feng-Min Lee

Yu-Yu Lin

Kuang-Chao Chen

Shing-Ann Luo

Chun-Cheng Chi

Chin-Yi Tseng

Chun-Chen Chi

Kai-Chih Chi

A computer implemented method of routing a net of an electronic circuit is disclosed. The net connects a plurality of pins of the electronic circuit. The method includes selecting, using one or more computer systems, first and second main spine routing tracks for respective first and second groups of pins of the net. The method also includes generating, using one or more computer systems, a first main spine wire on the selected first main spine routing track and a second main spine wire on the selected second main spine routing track. A router configured to perform the method is also disclosed.

Spine routing and pin grouping with multiple main spines

Spine routing with multiple main spines

A memory structure including an insulating layer, a first electrode layer and a first barrier is provided. The insulating layer has a recess. The first electrode layer is formed in the recess and has a first top surface. The first barrier is formed between the insulating layer and the first electrode layer, and has a second top surface lower than the first top surface. The first top surface and the second top surface are lower than an opening of the recess.

Memory structure and manufacturing method of the same

A high density plasma chemical vapor deposition (HDPCVD) process is disclosed. First, a first deposition step is performed on a wafer. Then, the wafer is rotated with an angle. A second deposition step is performed for completing the deposition. By the rotation of the wafer, the thin film is formed with a desired uniformity.

HDPCVD process and method for improving uniformity of film thickness

A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas to the oxygen or the proportion of the silicon-containing gas to the nitrogen-containing gas is increased to control the k value of the DARC. By means of proper control of the n value and the k value, the DARC can have the lowest substrate reflectivity.

Method for controlling the properties of DARC and manufacturing DARC

A method of filling intervals between protruding structures is provided. A substrate with a plurality of protruding structures thereon is provided. The protruding structures are distributed over the substrate such that intervals are formed between adjacent protruding structures. A first dielectric layer is formed over the substrate so that the dielectric material fills the intervals between the protruding structures and covers the protruding structures as well. The first dielectric layer has a plurality of apertures therein located at a level above a top section of the protruding structures. A chemical/mechanical polishing operation is performed to remove a portion of the dielectric layer and expose the apertures to form a plurality of openings. An anisotropic etching operation is performed to increase the width of these openings. Finally, a second dielectric layer is formed over the first dielectric layer to fill the openings completely.

Growing community of inventors

Hsinchu, Taiwan

Chien-Hung Lu