Macronix International Co., Ltd.

Xintec Corporation

Other

Hon Hai Precision Industry Co., Ltd.

Primax Electronics Ltd.

Quanta Computer Incorporated

Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Delta Electronics, Inc.

Au Optronics Corporation

Ship and Ocean Industries R&d Center

Cheng Uei Precision Industry Co., Ltd.

Inventec Corp.

Primax Elcetronics Ltd.

Chien-Hung Liu

Shyi-Shuh Pan

Ying-Nan Wen

Shou-Wei Huang

Yu-Chang Pai

Shou-Kuo Hsu

Ho-Yin Yiu

Tung-Cheng Kuo

Po-Chuan Hsieh

Ying-Tso Chen

Wei-Chung Yang

Shih-Yi Lee

Erh-Kun Lai

Chun-Jung Chen

Shu-Ming Chang

Chih-Wei Hung

Lei-Lung Tsai

Chin-Sung Pan

Bai-Yao Lou

Jian-Chiun Liou

Yen-Shih Ho

Bo-An Chen

Wen-Cheng Chien

Jyun-Siang Huang

Chi-Ming Huang

Kuo-Pin Chang

Ming-Han Wu

Yi-Wei Chen

Cheng-Te Chou

Shou-Wei Hung

Chia-Wei Chang

Po-Han Lee

Ying-Tso Lai

Je-Ping Hu

Che-Wei Yang

Tsung-Hao Yeh

Shou-Wei Hwang

Hsin-Fu Lin

Yi-Hua Chang

Shou Wei Huang

Chin-Hsien Chen

Chia-Cheng Chiao

Sih-Dian Lee

Yu-Tsung Lin

Tsai-Min Chiang

Ying Tzoo Chen

Wen-Ken Huang

Joey Lai

Ruey-Hsin Liu

Tsang-Yu Liu

Chih-Chang Cheng

Wei-Ming Chen

Chia-Lun Tsai

Chia-Ming Cheng

Chih-Wei Lee

Chun-Jen Chen

Chien-Hui Chen

Chia-Nan Pai

Yi-Lin Chen

Ming-Huan Yang

Chao-Kai Cheng

Chun-Ta Lin

Hsin-Huei Chen

Cheng-Shien Li

Tung-Yang Lin

Charles C Chang

Hsiao-Yun Su

Tien-Fan Ou

Sheng-Fan Chang

Jane Huei-Chen Chang

Chen-Hsuan Hsu

Chia-Wen Cheng

Chun-Yuan Liu

Tsu-Yi Chen

Chia-Tai Chen

Ching-Hung Wang

Wen-Chang Lee

Yu-Liang Hung

Hung-Jen Lee

Chih-Hao Huang

Han-Hsing Lin

Kun-Te Chen

Jia-Chi Chen

Shiang-Hung Huang

Yu-Hung Chuang

Kuo-pin Chang

Guan-De Lee

Yi Chen Chung

Pei-Chun Lin

Kou-Chen Liu

Jui-Pin Chang

Jian-Chiun Lion

Min-Tsung Chen

Shyi Shuh Pan

Po-Feng Wang

Fan-Lin Liu

Hua-Wei Lee

Fan-Bin Tseng

Jung Liao

Hsien-Jung Chen

A semiconductor device includes a semiconductor substrate, a first semiconductor layer, a first floating gate electrode, a first control gate electrode, an erase gate electrode, and a blocking layer. The semiconductor substrate has a first source/drain region. The first semiconductor layer extends upward from the first source/drain region of the semiconductor substrate. The first floating gate electrode surrounds the first semiconductor layer. The first control gate electrode surrounds the first floating gate electrode and the first semiconductor layer. The erase gate electrode is over the first floating gate electrode and the first control gate electrode. The erase gate electrode surrounds the first semiconductor layer. The blocking layer has a first portion between the first floating gate electrode and the first control gate electrode and a second portion between the erase gate electrode and the first semiconductor layer.

Semiconductor device

A semiconductor device includes a semiconductor layer, a drift region, a source area, a well region, a drain area, and a dielectric film. The drift region and the source area are formed in the semiconductor layer. The well region is formed in the semiconductor layer and between the drift region and the source area. The drain area is formed in the drift region. The dielectric film is formed in the drift region and is located between the source area and the drain area. The dielectric film includes a proximate end portion and a distal end portion which are proximate to and distal from the source area, respectively, and which are asymmetrical to each other.

Semiconductor device and method for manufacturing the same

A device is disclosed herein. The device includes at least two transmit portions and at least one contact portion. Each of the at least two transmit portions is configured to receive a bit line signal. The at least one contact portion is couple to the at least two transmit portions respectively and configured to transmit the bit line signals from the least two transmit portions to a source line.

Device and method for operating the same

A resonance detection system includes a vibration simulation mechanism and a vibration audio analysis device. The vibration simulation mechanism includes a mechanism body that accommodates a peripheral interface device, such as a notebook computer key input mechanical structure. The vibration simulation mechanism generates a vibration wave to the peripheral interface device generates a vibration audio signal in response to the vibration wave. The vibration simulation mechanism further includes a patch-type audio collector, such as a miniature auscultation radio patch, which is connected with the vibration audio analysis device. The patch-type audio collector is attached on the mechanism body containing the peripheral interface device. The vibration audio signal is collected by the patch-type audio collector. The vibration audio analysis device judges whether there is an abnormal resonance phenomenon in the vibration auto signal, which may be used for fabrication quality control of peripheral interface devices.

Resonance detection system for peripheral interface device

A semiconductor isolation structure includes a handle layer, a buried insulation layer, a semiconductor layer, a deep trench isolation structure, and a heavy doping region. The buried insulation layer is disposed on the handle layer. The semiconductor layer is disposed on the buried insulation layer and has a doping type. The semiconductor layer has a functional area in which doped regions of a semiconductor device are to be formed. The deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional area. The heavy doping region is formed in the semiconductor layer, is disposed between the functional area and the deep trench isolation structure, and is surrounded by the deep trench isolation structure. The heavy doping region has the doping type. A doping concentration of the heavy doping region is higher than that of the semiconductor layer.

Semiconductor isolation structure and method for making the semiconductor isolation structure

A method for fabricating a semiconductor device is provided. The method includes depositing a first dielectric layer over a substrate; depositing a sacrificial layer over the first dielectric layer; depositing a second dielectric layer over the sacrificial layer; depositing an erase gate electrode layer over the second dielectric layer; etching a memory hole in the erase gate electrode layer, the sacrificial layer, and the first and second dielectric layers; and forming a semiconductor layer in the memory hole.

Semiconductor device and method for fabricating the same

A transmission and distribution system with electric shock protection function includes a transmitting terminal and a receiving terminal. The transmitting terminal includes a switch, a current measurer, a signal generator, and a controller. The receiving terminal includes a filter. The switch is coupled to a first DC power and a transmission line. The current measurer is coupled to the transmission line, and measures a current of the transmission line and provides a current signal. The signal generator provides a disturbance signal to the transmission line. The controller receives the current signal and controls the switch. If the controller determines that the current signal contains the disturbance signal, the controller turns off the switch.

Transmission and distribution system with electric shock protection function and method of operating the same

A voice control system for operating machinery mainly comprises: an autonomous reaction device () for receiving input of a voice command () to establish or perform operation of at least one machining task of a specific set of industrial machinery; an interaction manager () for receiving and outputting the voice command (), the interaction manager () including interpreting an acoustic modeling algorithm, and identifying the voice command (), so as to form an identification instruction (), and the interpreted identification instruction () forming a basic machine control command and/or a machine motion control command corresponding to the operation of multiple machining tasks of the industrial machinery; and an upper controller () for receiving the basic machine control command and/or a machine motion control command, and operating a system of a driver () of the industrial machinery by voice input.

Voice control system for operating machinery

A key structure includes a keycap, a base plate and a wing-type supporting element. When the keycap is depressed in response to an external force, a first frame and a second frame of the wing-type supporting element are pushed by each other through protrusion structures and rotating shafts. Consequently, the first frame and the second frame can be swung relative to the base plate.

Key structure

A key structure includes a keycap, an elastic buffering element, a base plate, a first supporting element, a second supporting element and an elastomer. The elastic buffering element is installed in a locking part of the keycap. The first supporting element is connected with the keycap and the base plate. The keycap is movable upwardly or downwardly relative to the base plate through the first supporting element. A first end of the second supporting element is pivotally coupled to the base plate. A second end of the second supporting element is penetrated through a pivotal hole of the elastic buffering element and a clamping recess of the locking part. The elastomer is arranged between the keycap and the base plate. An inner diameter of the at least one pivotal hole is slightly smaller than an inner diameter of the clamping recess.

A keyboard device includes plural key structures. Each key structure includes a plate assembly, a keycap assembly, an elastic element, a connecting member and a signal generator. The plate assembly includes a membrane switch. The keycap assembly is located over the plate assembly. The elastic element is arranged between the plate assembly and the keycap assembly. The connecting member is arranged between the plate assembly and the keycap assembly. The connecting member includes a triggering part. The signal generator is installed on the plate assembly. While the keycap assembly is moved toward the plate assembly through the connecting member, the triggering part is moved downwardly to trigger the signal generator to generate a first signal. After the signal generator is triggered, the keycap assembly is continuously moved downwardly and the membrane switch is triggered to generate a second signal.

Keyboard device and key structure thereof

An environment detection method includes the following steps is provided. Firstly, an ultrasonic wave is emitted to a first reflecting cone by an ultrasonic transmitter, wherein the ultrasonic wave is reflected to the environment by the first reflecting cone in a full circumferential direction. Then, the ultrasonic waves reflected back from a second reflecting cone is received by an ultrasonic receiver. Then, a received signal waveform received by the ultrasonic receiver is recorded by a controller.

Environmental detection device and environmental detection method using the same

A keyboard device includes plural key structures. Each key structure includes a plate assembly, a keycap, a connecting member and a buffering element. The plate assembly has a hollow region. The keycap is located over the plate assembly. The connecting member is connected between the keycap and the plate assembly. The keycap is connected with the connecting member through at least one hook of the keycap. The keycap is movable upwardly or downwardly relative to the plate assembly through the connecting member. The buffering element is installed on the plate assembly. The buffering element is extended in a direction toward the keycap and penetrated through the hollow region of the plate assembly. While the keycap is moved downwardly and the at least one hook of the keycap is contacted with the buffering element, there is the gap between the keycap and the plate assembly.

A keyboard device includes plural key structures. Each key structure includes a supporting plate, a keycap, a connecting member and a hook element. The keycap is located over the supporting plate, and movable upwardly or downwardly relative to the supporting plate. The connecting member is connected between the supporting plate and the keycap. The hook element is installed on the supporting plate. The connecting member is connected with the supporting plate through the hook element. The supporting plate is made of a first material with a first specific gravity. The hook element is made of a second material with a second specific gravity. The second specific gravity is higher than the first specific gravity.

A method for programming a memory device is provided. The memory device includes first to fourth memory cells, in which the first and second memory cells share a first erase gate, and the third and fourth memory cells share a second erase gate. The method includes applying a first voltage to control gates of the first and third memory cell; applying a second voltage to control gates of the second and fourth memory cells, in which the first voltage is higher than the second voltage; applying a third voltage to a select gate of the first memory cell; and applying a fourth voltage to select gates of the second to fourth memory cell, in which the third voltage is higher than the fourth voltage.

Memory device and method for programming the same

Growing community of inventors

Taipei, Taiwan

Chien-Hung Liu