Taiwan Semiconductor Manufacturing Comp. Ltd.

Chien-Hua Tseng

Ryan Chia-Jen Chen

Ya-Yi Tsai

Shu-Uei Jang

Chung-Shu Wu

An-Chyi Wei

Chih-Hsien Hsu

Chia-Chi Chung

Chun Yan Chen

Wei-Da Chen

Chien-Sheng Wu

Han-Wen Fung

Tien-Chih Huang

Ya-Ping Su

A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

Method of forming a semiconductor device comprising top conductive pads

A method of forming a semiconductor device includes removing a top portion of a dielectric layer surrounding a metal gate to form a recess in the dielectric layer; filling the recess with a capping structure; forming a patterned hard mask over the capping structure and over the metal gate, wherein a portion of the metal gate, a portion of the capping structure, and a portion of the dielectric layer are aligned vertically with an opening of the patterned hard mask; and performing an etch process on said portions of the metal gate, the capping structure, and the dielectric layer that are aligned vertically with the opening of the patterned hard mask, wherein the capping structure has an etch resistance higher than an etch resistance of the dielectric layer during the etch process.

Method of forming semiconductor device and semiconductor device

A method of forming a semiconductor structure includes forming a metal gate stack over a shallow trench isolation (STI) material in a semiconductor substrate, forming an interlayer dielectric over the STI material, recessing the interlayer dielectric to a height lower than a top surface of the metal gate stack, forming a helmet structure over the recessed interlayer dielectric, and after forming the helmet structure, etching the metal gate stack until reaching the STI material.

Method of forming semiconductor structure and semiconductor device

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Hsinchu, Taiwan

Chien-Hua Tseng