Vanguard International Semiconductor Corporation

Inpaq Technology Co., Ltd.

Chien-Hsun Wu

Yung-Hsiang Chen

Chien-Hui Li

Tai-I Yang

Cheng-Ping Chang

Chih-Ming Chen

Kang-Neng Hsu

Chih-Jen Hsiao

Ming-Yu Chien

A capacitive biosensor is provided. The capacitive biosensor includes: a transistor, an interconnect structure on the transistor, and a passivation layer on the interconnect structure. The interconnect structure includes a first metal structure on the transistor, a second metal structure on the first metal structure, and a third metal structure on the second metal structure. The third metal structure includes a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The passivation has an opening exposing a portion of the third metal structure. The capacitive biosensor further includes a sensing region on the interconnect structure. The sensing region includes a first sensing electrode and a second sensing electrode. The first sensing electrode is formed of the third conductive layer, and the second sensing electrode is disposed on the passivation layer.

Capacitive biosensor and fabricating method thereof

A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.

Magnetoresistive devices and methods for forming the same

An electrical contact structure and a method for forming the electrical contact structure are provided. The method includes forming a thin film material layer on a substrate, forming a first barrier layer on the thin film material layer and forming a metal layer on the first barrier layer. The method further includes patterning the metal layer to form a metal pattern, forming a spacer on a sidewall of the metal pattern and covering a portion of the first barrier layer. The method further includes etching the first barrier layer, wherein the portion of the first barrier layer located under the spacer is not completely etched. The method further includes removing the spacer and exposing the sidewall of the metal pattern to form an electrical contact structure on the thin film material layer, wherein the first barrier layer has a protrusion part exceeding the sidewall of the metal pattern.

Electrical contact structure and methods for forming the same

A magnetoresistor device includes a magnetoresistor, a protection layer, a first conductive structure, and a second conductive structure. The magnetoresistor is disposed over a substrate. The protection layer is formed over a portion of the magnetoresistor. The first conductive structure is disposed over the protection layer and includes a lower barrier layer and a metal layer disposed over the lower barrier layer. The second conductive structure is disposed over the substrate and partially covers the magnetoresistor. The second conductive structure includes the lower barrier layer and the metal layer disposed over the lower barrier layer.

Magnetoresistor devices and methods for forming the same

A column antenna apparatus and a manufacturing method thereof are disclosed. This invention forms a spiral metal layer on a column body. The column antenna apparatus can simplify the manufacturing process and enhance the yield rate. The column antenna apparatus includes a column body, a metal layer and a spiral structure. The metal layer is formed on the surface of the column body, and the spiral structure is formed on the metal layer. The spiral structure is implemented by removing part of the metal layer to form a pitch structure. The column body is exposed between the pitches. The column antenna apparatus can be applied to a single, dual, three or multi frequencies wireless communication device. Furthermore, the column antenna apparatus can be installed at outside of the wireless communication device to be an external antenna or at inside of the wireless communication device to be a built-in antenna.

Growing community of inventors

Hsinchu, Taiwan

Chien-Hsun Wu