Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Nan Ya Plastics Corporation

Chien-Hsing Lee

Chih-Sheng Chang

Ling-Yen Yeh

Carlos H Diaz

Cheng-Yi Peng

Chun-Chieh Lu

Chia-Wen Chang

Wilman Tsai

Yee-Chia Yeo

Hong-Nien Lin

Tung-Ying Lee

Shao-Ming Yu

Cheng-Chung Lee

Win-San Khwa

Yu-Chao Lin

Jung-Hai Huang

Chun-Hsiung Yang

A memory device and a semiconductor die are provided. The memory device includes single-level-cells (SLCs) and multi-level-cells (MLCs). Each of the SLCs and the MLCs includes: a phase change layer; and a first electrode, in contact with the phase change layer, and configured to provide joule heat to the phase change layer during a programming operation. The first electrode in each of the MLCs is greater in footprint area as compared to the first electrode in each of the SLCs.

Memory device and semiconductor die having the memory device

A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Semiconductor device and manufacturing method thereof

In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase.

A negative capacitance device includes a semiconductor layer. An interfacial layer is disposed over the semiconductor layer. An amorphous dielectric layer is disposed over the interfacial layer. A ferroelectric layer is disposed over the amorphous dielectric layer. A metal gate electrode is disposed over the ferroelectric layer. At least one of the following is true: the interfacial layer is doped; the amorphous dielectric layer has a nitridized outer surface; a diffusion-barrier layer is disposed between the amorphous dielectric layer and the ferroelectric layer; or a seed layer is disposed between the amorphous dielectric layer and the ferroelectric layer.

Negative capacitance FET with improved reliability performance

A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.

Semiconductor device including standard cells with header/footer switch including negative capacitance

This invention relates to flame-retardant modified maleic anhydride resins. This resin copolymer consists of styrene, maleic anhydride and, along with a halogen-free epoxy resin, interacts with a hydroxyl group to become a flame-retardant maleic anhydride copolymer that can be applied to copper clad laminate and prepreg. This composition comprises: (A) one or more epoxy resin mixtures; (B) modified styrene-maleic anhydride curing agent copolymer; (C) additives; (D) inorganic fillers. When the aggregate amount of components (A), (B) and (C) equals 100%, component (A), epoxy resin mixture, is 60%-80% in total weight, component (B), modified styrene-maleic anhydride curing agent copolymer, equals 10%-40% in total weight. This invention uses the copolymer of Styrene and Maleic anhydride to generate a flame-retardant hydroxyl group, and with the phosphorus additive, the above components eventually interact to form a flame-retardant modified maleic anhydride copolymer curing agent.

Process for the preparation of a flame-retardant modified styrene-maleic anhydride resin and a composition of epoxy resins and their application to copper clad laminate and prepreg

A method for inputting Chinese characters, English alphabets, and Korean characters by using a numerical keyboard. The numerical keyboard includes a switching key set for switching the numerical keyboard to a respective software for presenting the Chinese characters, English alphabets and Korean characters. The Chinese characters, English alphabets, and Korean characters are distributed in the keys of the numerical keyboard. The Chinese character is inputted by clicking keys representing first stroke of a traditional recognized component of a Chinese character to be inputted and, a first and a last strokes of a non-traditional recognized component. The English alphabet and the Korean characters are inputted by keys representing vowels, consonants and epilogs thereof and if necessary, other keys for identifying the Chinese characters having same input way are inputted, and the # key and *key are used as auxiliary keys.

Growing community of inventors

Taipei, Taiwan

Chien-Hsing Lee