Macronix International Co., Ltd.

Chien-Hsin Liu

Nai-Ping Kuo

Chin-Chu Chung

Yu-Chih Yeh

Shuo-Nan Hung

Hsiang-Pang Li

Wei-Chieh Huang

Yu-Ming Chang

Hung-Sheng Chang

Ting-Yu Liu

Li-Chun Huang

Chun-Hsiung Hung

Kuen-Long Chang

Ken-Hui Chen

Su-Chueh Lo

Shih-Chou Juan

Hung-Jen Kao

Shunli Cheng

Jia-Xing Lin

A memory system that is based on 3D NAND flash memory of a high capacity and/or capable of high performance is provided, which includes memory planes, each including a plane core and a specific set of resources. For each memory plane of the plurality of memory planes, the technology provides (i) a corresponding plane busy (PRDY) signal indicating a busy or a ready state of the specific set of recourses of the corresponding memory plane, and (ii) a corresponding plane in operation (PIO #) signal indicating an in operation or idle state of resources used by the plane core of the corresponding memory plane. Issuance of memory commands by a controller and execution of memory commands for a memory plane of the plurality of memory planes is selectively allowed or denied, based on status of one or more of the plurality of PRDY signals and the plurality of PIO # signals.

Memory system having planes with multibit status

A memory device and a management method thereof are provided. The memory device includes a controller and at least one memory channel. The memory channel includes at least one memory chip. The at least one memory chip is commonly coupled to the controller through an interrupt signal wire. The at least one memory chip generates at least one local interrupt signal and performs a logic operation on the at least one local interrupt signal to generate a common interrupt signal. The interrupt signal wire is configured to transmit the common interrupt signal to the controller.

Memory device and management method thereof

A memory comprising a memory array, including a plurality of blocks, and control circuits comprising logic to execute operations is provided. The operations include decoding a read setup burst command identifying (i) an address of a first read setup block in a set of read setup blocks and (ii) a number of read setup blocks, as candidates for read setup operations. The operations further including, in response to the decoding of the read setup burst command, performing a read setup burst operation on a plurality of read setup blocks of the set of read setup blocks.

Implementing a read setup burst command in 3D NAND flash memory to reduce voltage threshold deviation over time

A method of operating a memory comprising a plurality of memory planes is disclosed. Each memory plane includes at least one corresponding memory array. The method includes, for each memory plane of the plurality of memory planes, generating (i) a corresponding plane ready (PRDY) signal indicating a busy or a ready state of the corresponding memory plane, and (ii) a corresponding plane array ready (PARDY) signal indicating a busy or a ready state of the corresponding memory array of the corresponding memory plane, such that a plurality of PRDY signals and a plurality of PARDY signals are generated corresponding to the plurality of memory planes. Execution of a memory command for a memory plane of the plurality of memory planes is selectively allowed or denied, based on status of one or more of the plurality of PRDY signals and the plurality of PARDY signals.

Memory supporting multiple types of operations

A storage device includes a memory array and a memory controller. The memory controller generates read and write commands for the memory array. An error correction code engine for the storage device is operable to use a plurality of different codeword sizes, different code rates, or different ECC algorithms. Logic is included that applies a selected codeword size, code rate or ECC algorithm in dependence on the operating conditions of the memory array.

Memory with multi-mode ECC engine

A method of operating a memory is provided. The method includes, in response to an access of a block of memory updating a first queue to identify the accessed block in response to a determination that the block is not already identified in the first queue and a determination that the block is not already identified in a second queue, and updating the second queue to identify the accessed block of memory in response to a determination that the block is already identified in the first queue. The method further includes scanning the second queue to identify, as a read setup candidate, each block of the memory that is identified as present in the second queue longer than a threshold, and performing a read setup operation on a block of memory that has been identified as the read setup candidate.

Implementing a read setup in 3D NAND flash memory to reduce voltage threshold deviation over time

A method for writing data into a persistent storage device includes grouping a plurality of data entries stored in a temporary storage device to form a data unit, such that the data unit has a size equal to an integer multiple of a size of an access unit of the persistent storage device. The method further includes writing the data unit into the persistent storage device.

Method, apparatus, and storage medium for writing data into persistent storage device

A memory device includes a memory controller and a non-volatile memory communicatively coupled to the memory controller and storing a mapping table and a journal table. The memory controller is configured to write data and a logical address of the data into the non-volatile memory, load mapping information related to the logical address of the data from the mapping table of the non-volatile memory into a mapping cache of the memory controller, update the mapping cache with an updated mapping relationship between the logical address of the data and a physical address of the data, and perform a journaling operation to write the updated mapping relationship into the journal table.

Memory device and operating method of same

A programming method, a reading method and an operating system for a memory are provided. The programming method includes the following steps. A data is provided. A parity generation is performed to obtain an error-correcting code (ECC). The memory is programmed to record the data and the error-correcting code. The data is transformed before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1.

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Hsinchu, Taiwan

Chien-Hsin Liu