Hannstar Display Corporation

Hannstar Display (nanjing) Corporation

Chien-Hao Wu

Po-Hsiao Chen

Rong-Bing Wu

Yi-Ting Lee

Yung-Fu Chen

Hsuan-Chen Liu

Hsien-Tang Hu

Da-Ching Tang

Chang-Ming Chao

Hsien-Cheng Chang

Ching-Chao Wang

Jung-Chen Lin

A method for manufacturing a semiconductor device is provided. The method comprises the steps of: providing a transparent substrate having a visible region and an invisible region; forming a gate and at least an alignment mark coplanarly on the transparent substrate, wherein the gate is located in the visible region and the alignment mark is located in the invisible region; forming a gate insulation layer to cover the gate and cover the alignment mark; forming an oxide semiconductor layer on the gate insulation layer above the gate; and forming an etching stop layer above the gate and the alignment mark.

Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device comprises the steps of: providing a transparent substrate; forming a gate electrode on the transparent substrate; forming a gate insulation layer covering the gate electrode; forming an oxide semiconductor layer on the gate insulation layer and at least partially over the gate electrode; forming an etching stop layer over the gate electrode and at least covering a part of the oxide semiconductor layer, wherein the etching stop layer includes an opening; forming an electrode layer at the opening and on a part of the etching stop layer; and applying a low-resistance treatment to a part of the oxide semiconductor layer uncovered by the etching stop layer and the electrode layer to form a pixel electrode.

A circuit stack structure is provided. The circuit stack structure includes a conductor layer having metal wires arranged at intervals, propping portions respectively disposed in a gap between any two of the neighboring metal wires, and a protective layer covering the metal wires and the propping portions. The propping portions are electrically isolated with the metal wires. With supporting by the propping portions, all regions of a top surface of the protective layer corresponding to one of the propping portions are coplanar with all regions of the top surface of the protective layer corresponding to each of the metal wires.

Circuit stack structure

The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.

Pixel structure having patterned transparent conductive layer

A method for manufacturing pixel structure is provided. A patterned conductor layer including a gate, a scan line and a conductor pattern is formed on a substrate. A gate insulating layer, a metal oxide material layer and an etching stop material layer are formed on the substrate. Using the patterned conductor layer as mask, a patterned photoresist layer is formed on the etching stop material layer through a back exposure process. Using the patterned photoresist layer as mask, a metal oxide channel layer and an etching stop layer are formed above the gate. A source and a drain are formed on the etching stop layer. A passivation layer is formed on the substrate. A halftone mask is used to form a photosensitive layer on the passivation layer. The metal oxide material layer and the etching stop material layer on the scan line and the conductor pattern are removed.

Method for manufacturing pixel structure

A display device and a fabrication method thereof are provided. The display device includes a first metal layer disposed on a display area and a peripheral area. An insulating layer covers the first metal layer. A patterned semiconductor layer is disposed on the insulating layer at the display area. A second metal layer is disposed on the patterned semiconductor layer and the insulating layer at the peripheral area. A transparent conductive layer directly covers the second metal layer. A protective layer completely covers the second metal layer, the patterned semiconductor layer and the transparent conductive layer. The protective layer includes a first portion, a second portion and a through hole, wherein the first portion has a height which is higher than a height of the second portion.

Display devices and fabrication methods thereof

An array substrate, liquid crystal display for the same and manufacturing method thereof are described. The array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, a plurality of contact pads, a passivation layer and transparent conducting layer. The substrate has a first display region, a second display region and a first non-display region. The contact pads are disposed in the first non-display region. The transparent conducting layer disposed in the passivation layer includes a first pixel electrode, a second pixel electrode and a plurality of comb electrode. The first pixel electrode and second pixel electrode are disposed in the first display region and the second display region wherein the widths of the first pixel electrodes either are equal to or approximate the widths of the second pixel electrodes. The comb electrodes are disposed in the first non-display region and connected to the contact pads.

Growing community of inventors

Tainan, Taiwan

Chien-Hao Wu