Ememory Technology Inc.

Chien-Han Wu

Chun-Hung Lin

Cheng-Da Huang

Chun-Hung Lu

A band-gap reference start-up circuit includes a pull-up unit, a bias current unit, and a start-up unit. The pull-up unit and the bias current unit are coupled to a control node. The start-up unit is coupled to a trigger terminal of the band-gap voltage reference circuit and the control node. During a start-up process of the band-gap voltage reference circuit, the bias current unit is enabled to generate a bias current for pulling down a voltage of the control node, the start-up unit is enabled to generate a start-up current for raising a voltage of the trigger terminal to enable the band-gap voltage reference circuit when the voltage of the control node is pulled down by the bias circuit unit, and the pull-up unit is enabled to generate the pull-up current for raising the voltage of the control node when the band-gap voltage reference circuit is enabled.

Band-gap reference start-up circuit with greater noise margin for start-up

A random bit cell includes a random bit cell. The random bit cell includes a volatile memory unit, a first non-volatile memory unit, a second non-volatile memory unit, a first select transistor, and a second select transistor. The first non-volatile memory unit is coupled to a first data terminal of the volatile memory unit, and the second non-volatile memory unit is coupled to a second data terminal of the volatile memory unit. The first select transistor has a first terminal coupled to the first data terminal of the volatile memory unit, a second terminal coupled to a first bit line, and a control terminal coupled to a word line. The second select transistor has a first terminal coupled to the second data terminal of the volatile memory unit, a second terminal coupled to a second bit line, and a control terminal coupled to a word line.

Growing community of inventors

Hsinchu County, Taiwan

Chien-Han Wu