South Epitaxy Corporation

Epitech Technology Corporation

Chien-Fu Shen

Shih-Chang Shei

Hsin-Ming Lo

Wei-Shou Chen

Chia-Sheng Chang

Yen-Wei Chen

A method for manufacturing a light-emitting diode (LED) is described. The method comprises: providing a temporary substrate; forming an illuminant epitaxial structure on the temporary substrate; forming a first transparent conductive layer on the illuminant epitaxial structure; forming a metal substrate on the first transparent conductive layer; forming an adhesion layer on the metal substrate; providing a supporting substrate, wherein the supporting substrate is connected to the metal substrate by the adhesion layer; removing the temporary substrate, so as to expose a surface of the illuminant epitaxial structure; forming a second transparent conductive layer on the exposed surface of the illuminant epitaxial structure; and forming an electrode on a portion of the second transparent conductive layer.

Method for manufacturing light-emitting diode

A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 &#x3bc;m and 150 &#x3bc;m. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.

Light-emitting diode

Growing community of inventors

Tainan County, Taiwan

Chien-Fu Shen