Epistar Corporation

Skymedi Corporation

Au Optronics Corporation

Phison Electronics Corporation

Chien-Fu Huang

Chia-Liang Hsu

Chih-Chiang Lu

Shih-I Chen

Chiu-Lin Yao

Tzu-Chieh Hsu

Chao-Hsing Chen

Hsin-Mao Liu

Chien-Kai Chung

Min-Hsun Hsieh

Ming-Hung Chou

Han-Lung Huang

Yi-Ming Chen

Hsin-Chih Chiu

Shih-Keng Cho

Chun-Yu Lin

Ching-Pei Lin

Chien-Fu Shen

Wen-Luh Liao

Hsin-Ying Wang

Chun-Yi Wu

Chun-Hsien Chang

Tsun-Kai Ko

De-Shan Kuo

Schang-Jing Hon

Han-Min Wu

Ye-Ming Hsu

Sheng-Jie Hsu

Wei-Yu Chen

Yu-Ren Peng

Shiuan-Leh Lin

Tzu Chieh Hsu

Yi-Chieh Lin

Sung-Yu Su

Shou-Lung Chen

Yao-Ning Chan

Hsien-Chun Wang

Chia-Ting Hsieh

Ya-Jung Wang

Shao-Ping Lu

Shou-Chin Wei

Chih-Cheng Tu

Yan-Wun Huang

Chih-Hwa Chang

Hsin-Ying Lin

Shih-Chang Lee

Che-Chia Chang

Chun-Fan Chung

Rong-Ren Lee

Hung-Ta Cheng

Jhih-Sian Wang

Hao-Min Ku

Rong-Fu Lin

June Woo Lee

Jing-Wun Jhang

Yi Ming Chen

Nien-Chen Li

Chung-Hsun Chien

Chen Ou

Yang-En Wu

Tsung-Xian Lee

Cheng-Nan Han

Fuja Shone

Tsung-Hsien Yang

Hsing-Chao Chen

Yi-Tang Lai

Tsen-Kuei Wang

Zong-Xi Chen

Chi-Hsing Chen

June-Woo Lee

Bing-Wei Yi

Hsiang-Ling Chang

Hung-Ta Chen

Tien-Yang Wang

Chien-Kai Chun

Ying Ming Chen

A regulator circuit module, a memory storage device, and a voltage control method are disclosed. The voltage control method includes: generating an output voltage according to an input voltage by a driving circuit; generating a feedback voltage according to the output voltage; and controlling the driving circuit by a first regulator circuit to adjust the output voltage in response to a current change caused by the feedback voltage.

Regulator circuit module, memory storage device and voltage control method

The present disclosure provides a light emitting diode component, including a body and a plurality of P-N diode structures. The P-N diode structures are coupled in series and integrated on the body. The P-N diode structures include a plurality of p-type doping layers and a plurality of n-type doping layers. The p-type doping layer of a first P-N diode structure in the P-N diode structures is electrically coupled to the n-type doping layer of a second P-N diode structure in the P-N diode structures.

Light emitting diode component and light emitting diode circuit comprising p-n diodes in series

The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

Method of manufacturing a light-emitting device

A pixel array is provided. The pixel array includes a plurality of pixels, wherein each of the pixels includes a light emitting diode, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to the first transistor and an anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to the second transistor. The fourth transistor is coupled to an anode of a light emitting diode of an adjacent pixel, a control terminal of the third transistor, and a cathode of the light emitting diode. The fifth transistor is coupled to the cathode of the light emitting diode, and receives a second control signal and a system low voltage.

Pixel array

A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

Light-emitting structure having a plurality of light-emitting structure units

A pixel array is provided. The pixel array includes a plurality of red pixels, a plurality of green pixels, and a plurality of blue pixels. Each green pixel includes a light emitting diode (LED), a first transistor, a second transistor, a third transistor, and a fourth transistor. The LED receives a system low voltage. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to a second end of the first transistor and the anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to a first end of the second transistor. The fourth transistor is coupled to the anode of the light-emitting diode of an adjacent green pixel, a control terminal of the third transistor, and the anode of the light-emitting diode.

Light-emitting device

A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.

A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

Light-emitting element having a reflective structure with high efficiency

The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

Light-emitting device and manufacturing method thereof

A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Method of selectively transferring semiconductor device

The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

Growing community of inventors

Hsinchu, Taiwan

Chien-Fu Huang