United Microelectronics Corp.

Chien-En Hsu

Ching-Hung Kao

Cheng-Yu Hsieh

Chien-Kee Pang

Sheng Zhang

Zhi-Rui Sheng

Wen-Bo Ding

Po-Sheng Lee

Guo-Zhong Xing

Chih-Nan Liang

A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.

Photodetector and method for fabricating the same

A wafer level packaging method includes the following steps. A first wafer is bonded over a second wafer. A first grinding process on the first wafer is performed, to remove an upper chamfered edge of the first wafer and reduce a thickness of the first wafer. A trimming process is performed on the first wafer, to remove a lower chamfered edge of the first wafer to form a trimmed first wafer. A second grinding process is performed on the trimmed first wafer, to reduce a thickness of the trimmed first wafer.

Wafer level packaging method

A method of making a gate structure includes the following steps. First, a gate is formed. Then, a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer are formed to cover the gate from bottom to top. Later, a dry etching is performed to etch the second silicon oxide layer. After that, a wet etching is performed to etch the silicon nitride layer and the first silicon oxide layer. The aforesaid wet etching is performed by utilizing an RCA cleaning solution. Furthermore, the silicon nitride layer is formed by the SINGEN process. Therefore, the first and second silicon oxide layer and the silicon nitride layer can be etched together by the RCA cleaning solution.

Gate structure and method of making the same

A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO, and then draining the water containing COto expose the substrate in an atmosphere of CO. The second rinse step includes rinsing the substrate using deionized water containing CO.

Wet cleaning process and method for fabricating semiconductor device using the same

A method of making a metal-metal capacitor is disclosed, in which a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, and a third metal layer are formed in the order over a substrate; an upper capacitor is defined by etching using a first mask, wherein the stop of the etching can be controlled; a lower capacitor is defined by etching using a second mask; and an anti-reflective third mask is formed to cover the surface, and the capacitor border and metal interconnect conductive wire are defined, so as to make a metal-metal capacitor with a stable structure in a wide process window.

Growing community of inventors

Hsinchu County, Taiwan

Chien-En Hsu