Advanced Optoelectronic Technology, Inc.

Innolux Corporation

Chien-Chung Peng

Tzu-Chien Hung

Chia-Hui Shen

Chien-Shiang Huang

Po-Min Tu

Shih-Cheng Huang

Chih-Jung Liu

Tsau-Hua Hsieh

Ya-Wen Lin

Ching-Hsueh Chiu

Chun-Hsien Lin

Chang-Ho Chen

Jong-Jan Lee

Po-Min Yu

Paul-John Schuele

A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The light emitting diode structure is square. The structural supporting area is positioned at a side of the top portion and protrudes from the surface of the bottom portion beside the top portion along the same direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.

Light emitting diode structure

A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

Detection method for light emitting diode chip

A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

Manufacturing method for light emitting diode crystal grains using adhesive layer on auxiliary substrate to fill gaps between light emitting diode crystal grains

A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The bottom portion is wider than the top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The structural supporting area protrudes from the surface of the bottom portion beside the top portion along the same single direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is at least arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.

A method for manufacturing a light emitting diode (LED) chip comprises steps of stacking together a first substrate, a buffer layer, an ultraviolet light (UV) shielding layer, and at least one LED chip in that sequence. An orthogonal projection of each LED chip on the UV shielding layer is located in the scope of the UV shielding layer, and a periphery of the UV shielding layer protrudes from a periphery of the orthogonal projection; mounting a side of each LED chip facing away from the first substrate on the second substrate with an adhesive layer; irradiating UV light from a side of the first substrate facing away from the LED chip, to separate the first substrate from the UV shielding layer; removing the UV light shielding layer, the second substrate, and the adhesive layer from each LED chip.

Method for manufacturing a light emitting diode chip

A light emitting diode include a light emitting chip, a first reflecting layer surrounding the light emitting diode chip, a first encapsulation layer and a second encapsulation layer covering on the light emitting diode chip. The light emitting chip has a light exiting surface, a first electrode and a second electrode. the first electrode and the second electrode are located opposite to the light exiting surface. Further, a second reflecting layer surrounds the periphery of the light emitting chip and also locates between the first encapsulation layer and the second encapsulation layer. A reflectivity of the first reflecting layer is greater than a reflectivity of the first reflecting layer. A bottom surface of the first electrode and the second electrode are exposed from the first reflecting layer.

Light emitting diode

A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.

Flip chip light emitting diode and method of manufacturing the same

A light emitting diode chip comprises a light emitting diode chip core and a coating layer. The coating layer covers side surfaces of the light emitting diode chip core. And a display composed of the light emitting diode chips is also provided.

Light emitting diode chip and display composed of light emitting diode chips

A light emitting device includes a base and a light emitting diode chip, the light emitting diode chip is formed on a top surface of the base, an outline of a projection of the light emitting diode chip projected on the top surface of the base is positioned in the top surface of the base. The light emitting device further includes a light reflecting portion, the light reflecting portion is formed on the top surface of the base, the light reflecting portion is defined around the light emitting diode chip, a height of the light reflecting portion is less than a height of the light emitting diode chip.

Light emitting device

A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.

Display apparatus and fabricating method thereof

An LED die includes a substrate, a light emitting structure, electrodes, a first transparent protecting layer, a reflection layer, and a second transparent protecting layer. The light emitting structure includes a first semiconductor layer, an active layer, a second semiconductor layer successively formed on the substrate. A part of first semiconductor layer being exposed. A first electrode is formed the first semiconductor layer. A second electrode is formed on the second semiconductor layer. The first transparent protecting layer, the reflection layer, and the second transparent protecting layer successively formed on the first electrode. The present disclosure also provides a method of manufacturing the LED die.

LED die and method of manufacturing the same

A light emitting diode (LED) includes a base, an LED die grown on the base, a transparent electrically conductive layer formed on a side of the LED die, a protecting layer covering the transparent electrically conductive layer, and a phosphor layer formed on the protecting layer. Through holes extend through the phosphor layer and the protecting layer to make part of light emitted from the LED die directly traveling out from the through holes to illuminate. A method for manufacturing the LED is also provided.

Growing community of inventors

Hsinchu, Taiwan

Chien-Chung Peng