Taiwan Semiconductor Manufacturing Comp. Ltd.

Chien Chung Fu

Hun-Jan Tao

Yi-Nien Su

Yi-Chen Huang

Ming-Hong Hsieh

Hui Ouyang

Via hole and trench structures and fabrication methods are disclosed. The structure comprises a conductive layer in a dielectric layer, and a via hole in the dielectric layer for exposing a portion of a surface of the conductive layer. A conductive liner covers the exposed surface of the first conductive layer. A trench is formed on the via hole in the dielectric without the conductive liner layer in the trench. Dual damascene structures and fabrications methods are also disclosed. Following the fabrication methods of the via hole and trench structures, a conductive layer is further formed in the via hole and trench structures.

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Sanchong, Taiwan

Chien Chung Fu