Taiwan Semiconductor Manufacturing Comp. Ltd.

Chien-Chih Wu

Yan-Hong Liu

Che-Fu Chen

Hung-Wen Chen

Che-fu Chen

Jer-Shien Yang

Yan-hong Liu

Shiang-Chin Lu

A workstation includes: a processing chamber configured to process a workpiece; a load port configured to interface with an environment external to the workstation; a robotic arm configured to transfer the workpiece between the load port and the processing chamber; and a defect sensor configured to detect a defect along a surface of the workpiece when transferred between the load port and the processing chamber.

Systems and methods for inspection stations

In an embodiment, a workstation includes: a processing chamber configured to process a workpiece; a load port configured to interface with an environment external to the workstation; a robotic arm configured to transfer the workpiece between the load port and the processing chamber; and a defect sensor configured to detect a defect along a surface of the workpiece when transferred between the load port and the processing chamber.

A system includes a factory interface, a deposition tool, and at least one measuring device. The factory interface is configured to carry a wafer. The deposition tool is coupled to the factory interface and configured to process the wafer transferred from the factory interface. The at least one measuring device is equipped in the factory interface, the deposition tool, or the combination thereof. The at least one measuring device is configured to perform real-time measurements of a thickness of a material on the wafer that is carried in the factory interface or the deposition tool.

Thickness measurement system and method

A semiconductor structure includes a semiconductor substrate, a dielectric layer, a buffer layer, at least one recess, and at least one conductor. The dielectric layer is present on the semiconductor substrate. The buffer layer is present between the semiconductor substrate and the dielectric layer. The recess extends into the semiconductor substrate through the dielectric layer and the buffer layer, in which the buffer layer has a removing rate with respect to an etching process for forming the recess. The removing rate of the buffer layer is between those of the semiconductor substrate and the dielectric layer. The conductor is present in the recess.

Growing community of inventors

Taoyuan, Taiwan

Chien-Chih Wu