Industrial Technology Research Institute

Chien-Chih Lee

Chen-Kuei Chung

Ching-Yi Wu

A method for anisotropic wet etching is disclosed. In to this invention, a photo mask for the etching mask suited in the anisotropic wet etching is provided. In the photo mask, a pattern with a series of adjacent corners having a substantially rectangular, angle is formed. At the corner areas compensational patterns comprising masked grids are prepared. The pattern on the photo mask is then transferred to an etching mask of a semiconductor substrate such that a multi-level terrace structure with fine corners may be prepared during the etching of the substrate. The method of this invention is also applicable to semiconductor materials with the same diamond structure as that of silicon.

Anisotropic wet etching

An etching method for a semiconductor substrate to form a multi-level terraced structures is disclosed. A photomask is used to prepare a etching mask on a semiconductor substrate for a multi-level terraced structure. Said photomask has a pattern with a plurality of regions. Widths of the masked areas of the pattern are so designed that the etching rate of the etchant to respective parts of the substrate may be controlled, whereby a multi-level terraced structure with decided widths and heights of all levels may be prepared with one single photomask under one single etching step. This invention also discloses the photomask used in the etching method and products prepared according to the etching method.

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Hsinchu, Taiwan

Chien-Chih Lee