International Business Machines Corporation

Bay Zu Precision Co., Ltd

Chien-Chih Huang

Devendra K Sadana

Jeehwan Kim

Augustin J Hong

Joel P Desouza

Chuan-Wen Wang

Shun-Ming Chen

Chien-Yeh Ku

Yu-Wei Huang

Chih-Fu Tseng

Tze-Chiang Chen

Marinus Hopstaken

A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

Double layered transparent conductive oxide for reduced Schottky barrier in photovoltaic devices

Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices

A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.

Solar cell made using a barrier layer between P-type and intrinsic layers

Solar cell made using a barrier layer between p-type and intrinsic layers

Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.

Solar cell made in a single processing chamber

Growing community of inventors

Pingtung, Taiwan

Chien-Chih Huang