Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Realtek Semiconductor Inc.

Other

Au Optronics Corporation

Siliconware Precision Industries Co., Ltd.

Tpo Displays Corporation

National Science Council

Hongqisheng Precision Electronics (qinhuangdao) Co., Ltd.

Zhen Ding Technology Co., Ltd.

Macronix International Co., Ltd.

National Yang Ming Chiao Tung University

Mstar Semiconductor, Inc.

Silicon Integrated Systems Corporation

Hiwin Mikrosystem Corporation

Chien-Chih Chen

Ching-Yu Chang

Mu-Han Cheng

Chien-Ping Huang

Shih-Ping Hsu

Shih-Ming Chang

Chih-Chiang Tu

Shieh-Hsing Kuo

Chun-Lang Chen

Chun-Hung Liu

Chih-Yung Huang

Yahru Cheng

Jong-Yuh Chang

Ren-Dou Lee

Chien-Cheng Chen

Chia-Hua Chang

Hui-Huang Chang

Wen Lo

Hsin-Wei Wu

Chen-Shao Hsu

Yun-Lung Tsai

Ching-Ling Lee

Ta-Wei Ou

Yao-Min Yu

Yu-Chieh Tsai

Tzu-Shin Chen

Chin-Hsiang Lin

Wein-Town Sun

Chien-Wei Wang

Che-Ming Teng

Su-Yu Yeh

Chi-Shun Weng

Chen-Der Tsai

Chih-Chen Chang

Ming-Jiun Liaw

Meng-Han Hsieh

Ching-Chiun Wang

Ya-Ling Cheng

Ping Luo

Chih-Yung Chen

Sheu-Meei Yu

Kung-Liang Lin

Yu-Ling Chang Chien

Hong-Xia Shi

Tsung-Yi Yang

Chun-Hai Huang

Jhon Jhy Liaw

Chia-Hao Chang

Jeng-Horng Chen

Chun-Chieh Wang

Chun-Kuang Chen

Wei-Liang Lin

Chen-Hsien Liao

Cheng-Han Wu

Shyi-Yuan Wu

Yuan-Ching Peng

Yu-Jen Chen

Cheng-Chi Lin

Chen-Yu Liu

Ya-Hsiang Tai

Ming-Daw Chen

Yuh-Ren Shen

An Shih

Shu-Hao Chang

Chia-Wei Chen

Wei-Kuo Lee

Chien-Min Wu

Yuhren Shen

Fu-Ching Tung

Shao-Jyun Wu

Yen-Hao Chen

Siao-Shan Wang

Li-Fan Chen

Chin-Chu Chen

Kuo-Chang Kau

Ming-Je Li

Yuan-Tung Dai

Kuo-Hsien Cheng

Ming-Jai Su

Yu-Ling Ko

Jung-Chen Chien

Chao-Yu Meng

Tien-Fu Chen

Ting-Wei Lin

Li-Ya Lee

Chung-Ting Chen

Jui-Hsia Hsu

Shih-Chin Lin

Wan-Ping Chen

Chih-Hong Chen

Po-Han Chao

Shih-Chang Lai

Yong-Nien Rao

Kuan-Yu Lin

Her-Shin Yang

Tsai-Fu Wu

Chia-Cheng Lin

Ying-Chih Lin

Shieh-Sien Wu

Shin-Chin Lien

A multilayer structure for lithography patterning is provided. The multilayer structure includes a substrate, a bottom anti-reflective coating (BARC) layer over the substrate, and a photoresist layer over the BARC layer. The BARC layer includes a polymer and a hydrolysis promoting agent. The photoresist layer includes an organometallic dimer obtained by partial hydrolysis of a precursor organometallic compound comprising hydrolysable ligands.

Metallic photoresist patterning and defect improvement

A Content Addressable Memory (CAM) array includes a first and a second cell structure sharing a cell boundary. The first cell structure includes a first storage circuit and a first comparator circuit, the first comparator circuit includes a first transistor having a gate, a drain, and a source. The second cell structure includes a second storage circuit and a second comparator circuit, the second comparator circuit includes a second transistor having a gate, a drain, and a source. The CAM array further includes a first shared source contact landing on the source of the first transistor and the source of the second transistor. The first shared source contact connects the source of the first transistor to the source of the second transistor. And the first shared source contact extends across the shared cell boundary from the first cell structure to the second cell structure.

Content addressable memory array device structure

A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The photoresist underlayer includes a polymer, including a main polymer chain having pendant target groups, and pendant organic groups or photoacid generator groups. The main polymer chain is a polystyrene, a polyhydroxystyrene, a polyacrylate, a polymethylacrylate, a polymethylmethacrylate, a polyacrylic acid, a polyvinyl ester, a polymaleic ester, a poly(methacrylonitrile), or a poly(methacrylamide). Pendant target groups are selected from the group consisting of a substituted or unsubstituted: C2-C30 diol group, C1-C30 aldehyde group, and C3-C30 ketone group. Pendant organic groups are C3-C30 aliphatic or aromatic groups having at least one photosensitive functional group, and pendant photoacid generator groups are C3-C50 substituted aliphatic or aromatic groups. A photoresist layer is formed over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation. The selectively exposed photoresist layer is developed to form a photoresist pattern.

Underlayer composition and method of manufacturing a semiconductor device

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.

Semiconductor structure and manufacturing method thereof

An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Dummy insertion for improving throughput of electron beam lithography

A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.

Bottom antireflective coating materials

In an embodiment, a system includes: a cassette comprising a slit opening configured to house a wafer; a blade configured to move the wafer to and from the slit opening by extending into the slit opening, wherein a blade thickness of the blade is at most &#x2156; of a height of the slit opening and wherein the blade is configured to secure the wafer within a pocket on the blade that is at least &#x2154; of a wafer thickness of the wafer.

Shiftless wafer blades

The present invention is related to an active substance ofhaving a pain-relieving effect, and a pharmaceutical composition including the active substance. The active substance is prepared using the following steps: (a) inoculating a mycelium ofon an agar plate and incubating at 15-32&#xb0; C. for 8-16 days; (b) inoculating the incubatedmycelia from step (a) into a medium in a flask and incubating at 20-30&#xb0; C. and pH 4.5-6.5 for 3-5 days; (c) inoculating the incubatedmycelia from step (b) into a medium in a fermentation tank and incubating at 24-32&#xb0; C. and pH 4.5-5.5 for 8-16 days to obtain a fermented medium of themycelia; and (d) desiccating the fermented medium of themycelia from step (c) to obtain the powder of themycelia, which is further purified and isolated to obtain a novel compound of

Heripenes with pain-relieving effect, active substances ofmycelium and the preparation method thereof, and pharmaceutical composition containing the heripenes or active substances

A lithography method includes forming a bottom anti-reflective coating (BARC) layer on a substrate, wherein the BARC layer includes an organic polymer and a reactive chemical group having at least one of chelating ligands and capping monomers, wherein the reactive chemical group is bonded to the organic polymer; coating a metal-containing photoresist (MePR) layer on the BARC layer, wherein the MePR being sensitive to an extreme ultraviolet (EUV) radiation; performing a first baking process to the MePR layer and the BARC layer, thereby reacting a metal chemical structure of the MePR layer and the reactive chemical structure of the BARC layer and forming an interface layer between the MePR layer and the BARC layer; performing an exposure process using the EUV radiation to the MePR layer; and developing the MePR layer to form a patterned photoresist layer.

Patterning process of a semiconductor structure with enhanced adhesion

A separate quantization method of forming a combination of 4-bit and 8-bit data of a neural network is disclosed. When a training data set and a validation data set exist, a calibration manner is used to determine a threshold for activations of each of a plurality of layers of a neural network model, so as to determine how many of the activations to perform 8-bit quantization. In a process of weight quantization, the weights of each layer are allocated to 4-bit weights and 8-bit weights according to a predetermined ratio, so as to make the neural network model have a reduced size and a combination of 4-bit and 8-bit weights.

Separate quantization method of forming combination of 4-bit and 8-bit data of neural network

In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

Method for manufacturing a semiconductor device and a coating material

A lithography method is provided in accordance with some embodiments. The lithography method includes forming a metal-containing layer on a substrate, the metal-containing layer including a plurality of conjugates of metal-hydroxyl groups; treating the metal-containing layer at temperature that is lower than about 300&#xb0; C. thereby causing a condensation reaction involving the plurality of conjugates of metal-hydroxyl groups; forming a patterned photosensitive layer on the treated metal-containing layer; and developing the patterned photosensitive layer so as to allow at least about 6% decrease of optimum exposure (E).

Patterning process of a semiconductor structure with a middle layer

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Taipei, Taiwan

Chien-Chih Chen