Industrial Technology Research Institute

Chien-Chiang Hsu

Kuo-Chuang Chiu

Chien-Chung Hsu

Kai-Hsiang Chuang

A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.

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Taichung, Taiwan

Chien-Chiang Hsu