Taiwan Semiconductor Manufacturing Comp. Ltd.

Chien-Chia Chiu

Tsung-Shu Lin

Wei-Cheng Wu

Li-Han Hsu

Chen-Hua Douglas Yu

Meng-Tsan Lee

Cheng-Hsien Hsieh

Hsien-Wei Chen

Ming-Yen Chiu

Chin-Te Wang

Der-Chyang Yeh

Wensen Hung

Tsung-Yu Chen

Yu-Chen Hsu

Wei-Chih Lai

Yu-Ling Tsai

Chun-Hung Lin

Hsin-Chieh Huang

Cheng-Chieh Hsieh

Shih-Wei Liang

Yu-Chia Lai

Hsien-Ming Tu

Chang-Pin Huang

Ching-Fu Chang

Bor-Rung Su

Pei-Ti Yu

A semiconductor device including a circuit substrate, a chip package, and a stiffener ring is provided. The chip package is disposed on and electrically connected to the circuit substrate, the chip package includes a pair of first parallel sides and a pair of second parallel sides shorter than the pair of first parallel sides. The stiffener ring is disposed on the circuit substrate, the stiffener ring includes first stiffener portions extending along a direction substantially parallel with the pair of first parallel sides and second stiffener portions extending along the direction substantially parallel with the pair of second parallel sides. The first stiffener portions are connected to the second stiffener portions, and the second stiffener portions is mechanically weaker than the first stiffener portions. A semiconductor device including stiffener lids is also provided.

Semiconductor device

A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.

Semiconductor package and manufacturing method thereof

A semiconductor package includes a chip package disposed on a substrate, a plurality of electronic components disposed aside the chip package on the substrate and a stiffener structure disposed on the substrate. The stiffener structure includes a stiffener ring surrounding the chip package and the plurality of electronic components, a stiffener rib between the chip package and the plurality of electronic components, wherein the stiffener rib includes a first portion and a second portion on the first portion, and a width of the second portion is greater than a width of the first portion. The semiconductor package further includes a lid attached to the stiffener structure, the chip package and the plurality of electronic components. A method of forming the semiconductor package is also provided.

Semiconductor package with stiffener structure and method forming the same

A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Semiconductor package with redistribution structure and manufacturing method thereof

Semiconductor package with stiffener structure

A semiconductor package includes a circuit substrate, a die, a frame structure, a heat sink lid and conductive balls. The die is disposed on a front surface of the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the front surface of the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies. The conductive balls are disposed on the opposite surface of the circuit substrate and electrically connected with the die through the circuit substrate.

Semiconductor package including shielding plate in redistribution structure, semiconductor package including conductive via in redistribution structure, and manufacturing method thereof

A package includes a first dielectric layer, a device die over and attached to the first dielectric layer, an active through-via and a dummy through-via, and an encapsulating material encapsulating the device die, the active through-via, and the dummy through-via. The package further includes a second dielectric layer over and contacting the device die, the active through-via, and the dummy through-via. An active metal cap is over and contacting the second dielectric layer and electrically coupling to the active through-via. The active metal cap overlaps the active through-via. A dummy metal cap is over and contacting the second dielectric layer. The dummy metal cap overlaps the dummy through-via. The dummy metal cap is separated into a first portion and a second portion by a gap. A redistribution line passes through the gap between the first portion and the second portion of the dummy metal cap.

Routing design of dummy metal cap and redistribution line

A method includes providing a die including a substrate and a bonding pad over the substrate, forming a connective layer over the die, and forming the landing pad over the connective layer. The forming the connective layer includes depositing a dielectric layer of a dielectric material over the die and patterning the dielectric layer. The patterning the dielectric layer includes forming a supporting pad area and forming a conductive channel area. A portion of the conductive channel area passes at least partially through the supporting pad area. At least one dielectric region interpose the portion of the conductive channel area and the supporting pad area. The forming the connective further includes filling the supporting pad area and the conductive channel area with a conductive material. The supporting pad area of the conductive material forms a supporting pad. The conductive channel area of the conductive material forms a conductive channel.

Post-passivation interconnect structure and methods thereof

A conductive pattern including a teardrop shaped portion, a routing line, and a connection portion is provided. The routing line links to the teardrop shaped portion through the connection portion, and a width of the connection portion decreases along an extending direction from the teardrop shaped portion to the routing line. Furthermore, an integrated fan-out package including the above-mentioned conductive pattern is also provided.

Conductive pattern and integrated fan-out package having the same

The semiconductor device includes a die that contains a substrate and a bond pad. A connective layer is disposed over the die. The connective layer includes a supporting pad and a conductive channel. A portion of the conductive channel passes at least partially through the supporting pad. At least one dielectric region is interposed between the supporting pad and the portion of the conductive channel.

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Zhongli, Taiwan

Chien-Chia Chiu