Taiwan Semiconductor Manufacturing Comp. Ltd.

Skymedi Corporation

Chien-Cheng Chen

Hsin-Chang Lee

Chia-Jen Chen

Shih-Ming Chang

Tran-Hui Shen

Pei-Cheng Hsu

Chen-Shao Hsu

Yen-Cheng Ho

Chin-Hsiang Lin

Chien-Chih Chen

Chun-Hung Liu

Chia-Hua Chang

Wen Lo

Hsin-Wei Wu

Yih-Chen Su

Ta-Wei Ou

Gaston Lee

Pei-Haw Tsao

Ta-Cheng Lien

Chih-Chiang Tu

Yun-Yue Lin

Jong-Yuh Chang

Kun-Lung Hsieh

Chue San Yoo

Huan-Ling Lee

Yu-Fen Chang

Yen-CHeng Ho

Chun-Lung Chuang

Cheng-Hung Wang

Yun-Ting Wang

Ming-Chung Chen

Yen-Chi Peng

Tsai-Jung Hung

A chip structure is provided. The chip structure includes a substrate. The chip structure includes an interconnect layer over the substrate. The chip structure includes a conductive pad over the interconnect layer. The chip structure includes a conductive bump over the conductive pad. The conductive bump has a first portion, a second portion, and a neck portion between the first portion and the second portion, the first portion is between the neck portion and the conductive pad, and the neck portion is narrower than both of the first portion and the second portion. The chip structure includes a support layer over the second portion of the conductive bump. A first composition of the support layer is different from a second composition of the conductive bump. The chip structure includes a solder structure over the support layer.

Chip structure

A lithography mask including a substrate, a phase shift layer on the substrate and an etch stop layer is provided. The phase shift layer is patterned and the substrate is protected from etching by the etch stop layer. The etch stop layer can be a material that is semi-transmissive to light used in photolithography processes or it can be transmissive to light used in photolithography processes.

Lithography mask and methods

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

Method of manufacturing photo masks

A pellicle includes a frame configured to attach to a photomask, wherein the frame includes a vent hole. The pellicle further includes a filter covering the vent hole, wherein the filter directly connects to an outer surface of the frame. The pellicle further includes a membrane extending over a top surface of the frame. The pellicle further includes a mount between the frame and the membrane, wherein the mount is attachable to the frame by an adhesive.

Pellicle having vent hole

An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Dummy insertion for improving throughput of electron beam lithography

A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.

Lithography mask

A chip structure is provided. The chip structure includes a substrate. The chip structure includes an interconnect layer over the substrate. The chip structure includes a conductive pad over the interconnect layer. The chip structure includes a conductive bump over the conductive pad. The conductive bump has a first portion, a second portion, and a neck portion between the first portion and the second portion. The first portion is between the neck portion and the conductive pad. The neck portion is narrower than the first portion and narrower than the second portion.

Chip package structure, chip structure and method for forming chip structure

A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Lithography mask with a black border regions and method of fabricating the same

A method of removing a pellicle from a photomask includes removing a portion of a membrane from a pellicle frame, wherein the pellicle frame remains attached to the photomask following the removing of the portion of the membrane. The method further includes removing the pellicle frame from the photomask. The method further includes cleaning the photomask.

Pellicle removal method

Growing community of inventors

Hsinchu County, Taiwan

Chien-Cheng Chen