Taiwan Semiconductor Manufacturing Comp. Ltd.

Nan Ya Technology Corporation

Pixart Imaging Incorporated

Coretronic Corporation

Primax Electronics Ltd.

Pixart Imagning Inc.

Chien-Chang Huang

Yu-Lung Yeh

Yu-Wei Ting

Chin-Ling Huang

Bo Ching Jiang

Chien-Nan Tu

Hsing-Chih Lin

Tie Jiang Wu

Shih-Shiung Chen

Chun-Huang Lin

Ming-Chi Wu

Chien Nan Tu

Jeng-Feng Lan

Bo-Ching Jiang

Tie-Jiang Wu

Chih-Cheng Hsieh

Ji Heng Jiang

Ching-Wei Chen

Chun-Chieh Fang

Wei-Tung Huang

Fan-Chieh Chang

Yi-Ping Pan

Yen-Hsiang Hsu

Li-Ming Sun

Tieh Chiang Wu

Shian-Jyh Lin

Ying-Che Tseng

Chi-Yuan Wen

Neng-Tai Shih

Yung-Chuan Tseng

Jian Wu

Sheng-Tsung Chen

Chien-Jung Yang

Tse-Main Kuo

Jung-Yu Cheng

Yi-Chuan Liu

Yi-Jung Chen

An LDMOS device comprises a well region, first and second implant regions, a gate electrode, first and second source/drain regions, a first STI region, and a first DTI region. The well region is in a substrate and of a first conductivity type. The first implant region is in the substrate and of a second conductivity type. The second implant region is in the well region and of the first conductivity type. The gate electrode extends from above the well region to above the first implant region. The first and second source/drain regions are respectively in the first and second implant regions. The first STI region laterally extends from the second implant region to directly below the gate electrode. The first DTI region extends downwards from a bottom surface of the first STI region into the well region. The first DTI region vertically overlaps with the gate electrode.

LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region

A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer.

CMOS image sensor structure with microstructures on backside surface of semiconductor layer

An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

Image sensor with a high absorption layer

CMOS image sensor structure with microstructures formed on semiconductor layer

A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.

Semiconductor image sensing device and manufacturing method thereof

A semiconductor device includes a carrier wafer, a device layer, a first semiconductor layer and a second semiconductor layer. The device layer is disposed on the carrier wafer. The first semiconductor layer is disposed on the device layer, and has a first side face and a second side face opposite to the first side face, in which the first side face is adjacent to the device layer. The second semiconductor layer is disposed on the first semiconductor layer, and has a third side face and a fourth side face opposite to the third side face, in which the fourth side face of the second semiconductor layer is adjacent to the second side face of the first semiconductor layer, and the second semiconductor layer is implanted and annealed.

Image sensor device with damage reduction

A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

CMOS image sensor structure

A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.

Method for forming CMOS image sensor structure

A vehicular projection system includes plural information collectors, a time-division multiplexing device and a projection mechanism. The plural information collectors are used for outputting driving information. The time-division multiplexing device includes plural wireless transmission modules. The time-division multiplexing device determines the transmitting sequence of plural information collectors according to the receiving sequence of wireless transmission requests from the plural information collectors. Moreover, the time-division multiplexing device determines the suitable wireless transmission modules according to the file properties of the driving information and the wireless transmission capabilities of the plural information collectors. Since the plural information collectors can simultaneously transmit driving information to the time-division multiplexing device through different wireless transmission modules, the wireless transmission efficiency is enhanced.

Vehicular projection system

A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

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Hsinchu, Taiwan

Chien-Chang Huang