Uni Light Technology Inc.

Chien-An Chen

Bor-Jen Wu

Nae-Guann Yih

Nai-Chuan Chen

Yuan-Hsiao Chang

Mei-Hui Wu

Yuan-Hsin Tzou

Hsiao-Ping Chiu

Li-Shei Yeh

A method for manufacturing GaN LED devices is disclosed herein. First, a LED epitaxial layer is formed on a provisional substrate. Part of the LED epitaxial layer is removed to form a plurality of LED epitaxial areas. Then, a first transparent conductive layer, a metal reflective layer, and a first metal bonding layer are sequentially formed on the plurality of LED epitaxial areas and then part of the first transparent conductive layer, the metal reflective layer, and the first metal bonding layer are removed. Next, a permanent substrate is provided. At least a metal layer and a second metal bonding layer are formed on the permanent substrate. Then, part of at least the metal layer and the second metal bonding layer are removed. Next, the provisional substrate is bonded to the permanent substrate by aligned wafer bonding method. Then, the provisional substrate is removed to expose a surface of the LED epitaxial layer and then an n-type electrode is formed on the surface. Next, the permanent substrate is cut to form a plurality of LED devices.

Method for manufacturing gallium nitride light emitting diode devices

An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.

Electrode structure for a light-emitting element

An LED epitaxial structure and a first electrode layer are formed on a provisional substrate in sequence. Then, a metallic permanent substrate is formed on the first electrode layer, and the provisional substrate is removed to expose a surface of the LED epitaxial structure. A plurality of second electrodes is formed on the surface of the LED epitaxial structure. Finally, the metallic permanent substrate, the first electrode layer, and the LED epitaxial structure are diced to form a plurality of LED devices.

Method for forming an LED device with a metallic substrate

The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor substrate and then removing the semiconductor substrate. The metal substrate has advantages of high thermal and electrical conductivity that can improve the reliability and lifetime of the semiconductor device.

Method for forming a semiconductor device having a metal substrate

The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.

Method for forming a semiconductor device having a metallic substrate

The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of the second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape corresponds to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.

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Hsin-Chuang, Taiwan

Chien-An Chen