Canon Kabushiki Kaisha

Fuji Chemical Company, Limited

Chiemi Shimizu

Fumio Uchida

Makoto Kubota

Kenji Maeda

Motokazu Kobayashi

Shinji Eritate

Hisato Yabuta

Takanori Matsuda

Kanako Oshima

Miki Ueda

Hiroki Imai

Kenji Takashima

Mikio Shimada

Hisao Suzuki

Jumpei Hayashi

Yoshinori Kotani

Yoshihiro Ohashi

Toshiya Yuasa

Minako Nakasu

Keiko Abe

Naoyuki Koketsu

A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05&#x2264;x&#x2264;0.12, a molar ratio y of Na to Nb is 0.93&#x2264;y&#x2264;0.98, a molar ratio z of Ba to Ti is 1.09&#x2264;z&#x2264;1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006&#x2264;m&#x2264;0.0030, and 1.07&#x2264;y&#xd7;z&#x2264;1.50 is satisfied.

Piezoelectric material, piezoelectric element, and electronic equipment

A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430&#x2264;a&#x2264;0.460, 0.433&#x2264;b&#x2264;0.479, 0.040&#x2264;c&#x2264;0.070, 0.0125&#x2264;d&#x2264;0.0650, 0.0015&#x2264;e&#x2264;0.0092, 0.9&#xd7;3e&#x2264;c&#x2212;d&#x2264;1.1&#xd7;3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Na(BiBa)NbTiO(where 0.84&#x2264;x&#x2264;0.92, 0.84&#x2264;y&#x2264;0.92, 0.002&#x2264;(w+s)(1&#x2212;y)&#x2264;0.035, and 0.9&#x2264;w/s&#x2264;1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

Provided is a coating liquid for forming a piezoelectric thin film containing lead zirconate titanate, the coating liquid including a complex precursor containing at least three kinds of metal elements of Pb, Ti, and Zr, the coating liquid being free from an exothermic peak at a temperature of 450&#xb0; C. or more, or having a heat generation amount at a temperature of from 400&#xb0; C. to 450&#xb0; C., which is larger than a heat generation amount at a temperature of from 450&#xb0; C. to 500&#xb0; C., in differential thermal analysis of the coating liquid.

Coating liquid for forming piezoelectric thin film, method of producing coating liquid for forming piezoelectric thin film, piezoelectric thin film, method of manufacturing piezoelectric thin film, and liquid ejection head

Provided is use of an oriented piezoelectric film including of a perovskite-type crystal represented by the following general formula (1): BaCaTiZrO(0&#x2264;x&#x2264;0.2, 0&#x2264;y&#x2264;0.2) (1). The oriented piezoelectric film is formed on an oriented underlayer oriented in a (111) plane and contains first crystals oriented in the (111) plane with respect to a film surface and randomly oriented second crystal grains. The first crystal grains have an average grain diameter of from 300 nm to 600 nm and the second crystal grains have an average grain diameter of from 50 nm to 200 nm.

Oriented piezoelectric film and method of manufacturing same, and liquid ejection head

Provided is a lead-free piezoelectric material having a satisfactory and stable piezoelectric constant and electric insulation property in a wide practical temperature range. Provided is a piezoelectric material, including a perovskite-type metal oxide represented by the following general formula (1) as a main component, the piezoelectric material containing Mn in a content of 0.01 part by weight or more and 0.80 part by weight or less with respect to 100 parts by weight of the perovskite-type metal oxide: (LiNaKBaBi)(TiFe) O. . . (1), where 0.800&#x2266;&#x3b1;&#x2266;0.999, 0&#x2266;&#x3b2;&#x2266;0.150, 0.001&#x2266;&#x3b3;&#x2266;0.050, &#x3b1;+&#x3b2;+&#x3b3;=1, 0&#x2266;x&#x2266;0.050, 0.045&#x2266;y&#x2266;0.450, 0.045&#x2266;z&#x2266;0.450, 0.450&#x2266;x+y+z&#x2266;0.500, and 0.980&#x2266;a&#x2266;1.020.

Piezoelectric material, piezoelectric element, multilayered piezoelectric element, liquid ejection head, liquid ejection apparatus, ultrasonic motor, optical equipment, vibration apparatus, dust removing apparatus, imaging apparatus, and electronic equipment

Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Bismuth iron oxide powder, manufacturing method for the bismuth iron oxide powder, dielectric ceramics, piezoelectric element, liquid discharge head, and ultrasonic motor

There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula PbLa(ZrTi)O(where 0&#x2266;x&#x3c;1, 0.05&#x2266;y&#x2266;1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head

Method of manufacturing piezoelectric thin film

A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.

Piezoelectric element, piezoelectric actuator, and ink jet recording head

A piezoelectric element including a vibrating plate, a lower electrode, a piezoelectric film and an upper electrode laminated in this order, wherein the lower electrode, the upper electrode and the piezoelectric film are formed by a perovskite type oxide while the vibrating plate is formed by a metal oxide, and a junction interface is substantially absent between the vibrating plate and the lower electrode, between the lower electrode and the piezoelectric film and between the piezoelectric film and the upper electrode.

Piezoelectric element, ink jet recording head and producing method for piezoelectric element

There is disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula PbLa(ZrTi)O(where 0&#x2266;x&#x3c;1, 0.05&#x2266;y&#x2266;1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

In a piezoelectric element having a piezoelectric film sandwiched between a lower electrode and an upper electrode, the lower electrode and/or the upper electrode and the piezoelectric film comprise perovskite oxide and a contact interface between the lower electrode and/or the upper electrode and the piezoelectric film does not exist and a region where crystals of the lower electrode and/or the upper electrode and crystals of the piezoelectric film are mixed exists between the lower electrode and/or the upper electrode and the piezoelectric film.

Piezoelectric element, ink jet recording head and method for manufacturing piezoelectric element

A composition for forming a piezoelectric containing a dispersoid obtained from metallic compound, wherein the content of hafnium in the composition is 3,000 ppm or less.

Growing community of inventors

Hirakata, Japan

Chiemi Shimizu