Ememory Technology Inc.

Chieh-Tse Lee

Cheng-Da Huang

Chun-Hung Lin

Chih-Wei Chen

Chih-Chun Chen

Ting-Yang Yen

When a driving circuit of an anti-fuse memory device programs a selected anti-fuse memory cell, voltage differences between unselected bit lines and unselected anti-fuse control lines would be eliminated or decreased to an acceptable value by floating unselected anti-fuse control lines or by applying a second control line voltage to the unselected anti-fuse control lines. Leakage currents flowing from unselected bit lines through ruptured anti-fuse transistors of the anti-fuse memory device to the unselected anti-fuse control lines would be decreased or eliminated, and program disturbance would be avoided.

Anti-fuse memory device, memory array, and programming method of an anti-fuse memory device for preventing leakage current and program disturbance

A memory system includes a plurality of memory cells. A memory cell includes an anti-fuse transistor, a first select unit, and a second select unit. The anti-fuse transistor has a first terminal, a second terminal, and a control terminal coupled to an anti-fuse control line. The first select unit is coupled to the first terminal of the anti-fuse transistor, a first bit line, and an odd word line. The second select unit is coupled to the second terminal of the anti-fuse transistor, a second bit line, and an even word line. During a pre-screen operation of the memory cell, the odd word line and the even word line are at different voltages.

Memory system capable of pre-screening internal transistors

A power-up sequence protection circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. First terminals of the first transistor, the second transistor, and the fourth transistor are coupled for receiving a program voltage. A control terminal of the third transistor is used for receiving a device voltage. A second terminal of the fourth transistor is used for outputting the program voltage when the fourth transistor is turned on. When the program voltage is unexpectedly powered up while the device voltage is not powered up, the first transistor is turned on, the second transistor is turned off, and the fourth transistor is turned off so as to block the program voltage outputted from the second terminal of the fourth transistor.

Growing community of inventors

Hsinchu County, Taiwan

Chieh-Tse Lee