Artilux Corporation

Chieh-Ting Lin

Shu-Lu Chen

Szu-Lin Cheng

Hui-Wen Chen

Yun-Chung Na

Han-Din Liu

Chien-Lung Chen

Che-Fu Liang

Chung-Chih Lin

Kuan-Chen Chu

Yuan-Fu Lyu

Bo-Jiun Chen

Shu-Wei Chu

Chien-Yu Chen

Ming-Jay Yang

Yu-Hsuan Liu

Tsung-Ting Wu

Chia-Peng Lin

Shih-Tai Chuang

Yu-Yi Hsu

A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

High-speed light sensing apparatus III

A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.

Light emission apparatus

Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Multi-wafer based light absorption apparatus and applications thereof

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Zhubei, Taiwan

Chieh-Ting Lin