Taiwan Semiconductor Manufacturing Comp. Ltd.

Chieh-Hsin Hsieh

Wei-Han Lai

Ching-Yu Chang

A method of manufacturing a semiconductor device includes forming a protective layer over a substrate. The hydrophilicity of the protective layer is reduced. A resist layer is formed over the protective layer, and the resist layer is patterned. The hydrophilicity of the protective layer can be reduced by applying an ethylene oxide, a propylene oxide or a combination of both to the protective layer.

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming a first layer including an organic material over a substrate. A second layer including a reaction product of a silicon-containing material and a photoacid generator is formed over the first layer. A photosensitive layer is formed over the second layer, and the second layer is patterned.

A photoresist includes a polymer and a photoactive compound. The photoactive compound contains a sensitizer component. The photoactive compound contains an acid generator or a base molecular. The acid generator or the base molecular bonds the sensitizer component. The photoactive compound is within a polymer backbone. The sensitizer component is configured to absorb an EUV light to produce electrons.

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Hsinchu, Taiwan

Chieh-Hsin Hsieh