Micron Technology Incorporated

Chieh Hsien Quek

Jordan D Greenlee

Rita J Klein

Christian George Emor

Biow Hiem Ong

Chii Wean Calvin Chen

Wing Yu Lo

John David Hopkins

Everett Allen McTeer

Nancy M Lomeli

Shuangqiang Luo

David A Daycock

Jiewei Chen

David Daycock

Song Kai Tan

Sijia Yu

Anurag Jindal

Jing Wai Fong

A method used in forming a memory array comprising strings of memory cells comprises forming memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Individual of the conductive tiers comprise laterally-outer edges comprising conductive molybdenum-containing metal material extending horizontally-along its memory block. Channel-material strings extend through the insulative tiers and the conductive tiers. At least one of conductive or semiconductive material is formed extending horizontally-along the memory blocks laterally-outward of the laterally-outer edges comprising the conductive molybdenum-containing metal material that extends horizontally-along its memory block. Insulator material extending horizontally-along the memory blocks is formed laterally-outward of the at least one of the conductive or the semiconductive material that is laterally-outward of the laterally-outer edges comprising the conductive molybdenum-containing metal material. Other embodiments, including structure independent of method, are disclosed.

Methods used in forming a memory array comprising strings of memory cells and memory arrays comprising strings of memory cells

Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

Methods for fabricating microelectronic devices with contacts to conductive staircase steps, and related devices and systems

Some embodiments include conductive interconnects which include the first and second conductive materials, and which extend upwardly from a conductive structure. Some embodiments include integrated assemblies having conductive interconnects.

Conductive interconnects

Growing community of inventors

Singapore, Singapore

Chieh Hsien Quek