Taiwan Semiconductor Manufacturing Comp. Ltd.

Jiangsu Advanced Memory Technology Co., Ltd.

Jiangsu Advanced Memory Semiconductor Co., Ltd.

Chieh-Fang Chen

Chung-Te Lin

Feng-Cheng Yang

Feng-Ching Chu

Katherine H Chiang

Chung-Hon Lam

Kuo-Feng Lo

Yu Zhu

Yu-Ming Lin

Meng-Han Lin

Han-Jong Chia

Sheng-Chen Wang

Chieh-Yi Shen

Chih-Hsuan Cheng

A method for forming a semiconductor memory structure is provided. The method includes forming a stack over a substrate, and the stack includes first dielectric layers and second dielectric layers vertically alternately arranged. The method also includes forming first dielectric pillars through the stack, and etching the stack to form first trenches. Sidewalls of the first dielectric pillars are exposed from the first trenches. The method also includes removing the first dielectric pillars to form through holes, removing the second dielectric layers of the stack to form gaps between the first dielectric layers, and forming first conductive lines in the gaps.

Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines

The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

Memory device and manufacturing method thereof

A memory device includes a plurality of first conductive pillars, a plurality of second conductive pillars, a plurality of gap filling pillars, a channel layer and first dielectric pillars. The gap filling pillars are located in between the first conductive pillars and the second conductive pillars. The channel layer is extending in a first direction, and located on side surfaces of the first conductive pillars and the second conductive pillars. The first dielectric pillars are located in between the channel layer and the plurality of gap filling pillars, wherein a length of an interface where the first dielectric pillars contact the gap filling pillars along the first direction is different from a length of the gap filling pillars along the first direction.

Memory device and method of forming the same

A method of manufacturing a diode structure includes forming a first stack on a silicon layer on a substrate. A first sidewall spacer extending along and covering a sidewall of the first stack is formed. The silicon layer is selectively etched to a first predetermined depth, thereby forming a second stack. The remaining silicon layer includes a silicon base. A second sidewall spacer extending along and covering a sidewall of the second stack is formed. The silicon base is selectively etched to form a third stack on the substrate. With the second sidewall spacer as a mask, lateral plasma ion implantation is performed. Defects at the interface between two adjacent semiconductor layers can be reduced by the method.

Method of fabricating diode structure

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Hsinchu County, Taiwan

Chieh-Fang Chen