Taiwan Semiconductor Manufacturing Comp. Ltd.

Chieh-Chun Chiang

Chun-Hsiang Fan

Zhiqiang Wu

Kuo-Bin Huang

Chun-Fu Cheng

Ta-Wei Lin

Kuo-An Liu

Meng-Yu Lin

Kai Tak Lam

Chun-Liang Tai

Shih-Hsiang Chiu

A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a fin, and a semiconductor layer. The fin is over the substrate, the semiconductor layer is over the fin, the substrate and the fin are made of different materials, and the fin and the semiconductor layer are made of different materials. The method includes forming a dielectric layer over the semiconductor layer and the fin. The method includes forming a semiconductor structure over a sidewall of the dielectric layer. The method includes removing a first top portion of the dielectric layer over a top surface of the semiconductor layer. The method includes forming a gate over the semiconductor layer, the dielectric layer, and the semiconductor structure.

Semiconductor device structure with fin and method for forming the same

A method of manufacturing a semiconductor device is provided. The method comprises the following steps of forming a first semiconductor layer over a substrate, the first semiconductor layer comprising a first semiconductor material; etching the first semiconductor layer to form a first recess; forming a second semiconductor layer in the first recess, the second semiconductor layer comprising a second semiconductor material different from the first semiconductor material; etching the first semiconductor layer and the second semiconductor layer to form a first fin comprising the second semiconductor layer and the first semiconductor layer; forming an insulation material over the substrate, wherein a top surface of the insulation material is flush with a top surface of the first fin; performing an implantation process on the first fin to form an implant region near the top surface of the first fin; and partially removing the insulation material to form shallow trench isolation regions, wherein the first fin is sandwiched by two adjacent shallow trench isolation regions.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Taipei, Taiwan

Chieh-Chun Chiang