Au Optronics Corporation

Chieh-Chou Hsu

Fang-Chen Luo

Wan-Yi Liu

Chia-Tien Peng

Chih-Hsiung Chang

Chien-Shen Weng

Jhen-Yue Li

A dielectric layer including a film with silicon compound contain oxygen and a film with silicon compound contain nitrogen is provided. A ratio of Si&#x2014;N group absorption intensity to a thickness of the film with silicon compound contain nitrogen in an FTIR spectrum is substantially greater than or substantially equal to 0.67/&#x3bc;m. The dielectric layer can be incorporated in switch devices.

Dielectric layer and thin film transistor

A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.

Thin film transistor

A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.

Growing community of inventors

Kaohsiung, Taiwan

Chieh-Chou Hsu